参数资料
型号: V20100SG-E3/4W
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 144K
描述: DIODE SCHOTTKY 20A 100V TO-220AB
产品目录绘图: TO-220AB Pin Out
Circuit
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 20A
电压 - 在 If 时为正向 (Vf)(最大): 1.07V @ 20A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 350µA @ 100V
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: V20100SG-E3/4WGI
I00
10
Instantaneous Forward Current (A)
0.2
04 0.6 0.5 in ‘.2 1.4
Instantaneous Fonlvard Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
I00eE ‘O —-3 1 — —E Z Z 2 2
2
u) _
t T if Jfff
5 j n5t— Pulse Duration (s)
U, 0.1
2
g ------ ----
: IlllllllllllllllIlll:=:§;!-=‘IIlllE 0_01 - - Li
I!
E ;.__.___._______ .___.___
E IIIIoo:3minPercent of Rated Peak Reverse Voltage (%)
3
Mi0'0|
(A:El
4:.
0‘Ellm
0'
\IOI0'
0'
Fig. 4 - Typical Reverse Characteristics
10 000
Junction Capacitance (pF)
8oo
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Document Number: 88966
Revision: 08?Oct-O9
For technical questions within your region. please contact one of the following:
DiodesAmericas@vishaycom, DiodesAsia@vishay_com, DiodesEurope@vishay.com
New Product
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Vishay General Semiconductor
to
uncuen to Case
J01
TransientThermaI Impedance ("C/W)
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Junction to Case
vF20i00se
TransientThermaI Impedance ("C/W)
Fig. 7 - Typical Transient Thermal Impedance
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