参数资料
型号: V30100SG-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 156K
描述: DIODE SCHOTTKY 30A 100V TO-220AB
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 350µA @ 100V
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
New Product
V301o0sG, VF3o1oosG, VB3o1oosG & vl3o10osG ‘M
Vishay General Semiconductor 7
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 00 unless otherwise noted)Breakdown voltage IR : 10 mA 105 (minimum)
PARAMETER TEST CONDITIONS
0.50
0.60
0.92
Instantaneous fonrvard voltage ("0.44
— TA : 125 “C 0.55
0.76
TA : 25 CC
T 125°C 6.5
Reverse current ‘2) A
Notes
(‘) Pulse test: 300 its pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 3 40 ms
THERMAL cHARAcTERIsTIcs (TA = 25 no unless otherwise noted)
PARAMETER M V3010oSG VF3o100SG VB3o100SG Vl3o100SG
Typical thermal resistance per leg £j
ORDERING FORMATION (Example)
PREFERRED P/N UNIT WEIGHT (9) PACKAGE coDE BASE QUANTITY DELIVERY MODE
To?22oAB vso1ooseeE3/4w ‘raj
-To-22oAB vF3o1oosG-Es/4w 22:11
We vB3o1oosG-E3/4w jjm
mm eoolreel rapeandreel
TO?263AB VB30100SG-E3/SW
TO-262AA V|30100SG-E3/4W
RATINGS AND cHARAcTERIsTIcs cuRVEs
(TA = 25 cc unless otherwise noted)
35
2 30 ‘ j V(B,I)aol0osG
E) 25 vFsolo0SG K A %
8 — §
'2 20 ‘T;s --- \ su) D)
E '5 — — 2‘:
g to g
2 — — 30 25 50 75 I00 I25 I50 0 4 B I2 is 20 24 25 32 36Case Temperature (°C) Average Forward Current (A)
< 5 —
I)
Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88996
2 PDD-Americas@vishay_oom, PDD-Asia@vishay.oom, PDD-Euroge@vishay_oom Revision: 24-Jun-09
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