参数资料
型号: V30120SG-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 150K
描述: DIODE SCHOTTKY 30A 120V TO220-3
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 120V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 1.28V @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 120V
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
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ELEOTRIOAL OHARAOTERISTIOS (TA = 25 0C unless otherwise noted)
PARAMETER TEST CONDITIONS
Breakdown voltage In : 1.0 mA
Instantaneous forward voltage 1”
TA:125°C
Reverse current 12)
N ates
(I) Pulse test: 300 us pulse width, 1 % duty cycle
(2) Pulse test: Pulse width S 40 ms
THERMAL OHARAOTERISTIOS (TA = 25 00 unless otherwise noted)
PARAMETER E? vBao12osG vlsoizose
Typicalthermalresistance -mn—1zE—jt
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (9) PACKAGE CODE BASE QUANTITY DELIVERY MODE
To-22oAB vso12osG-Ea/4w £21
ITO-22oAB vrsoizose-Es/4w 1121
To-2ssAB vssoizose-E3/Aw S11S131 800/reel Tapeandreel
TO-263AB vB30120SG-E3/aw
TO-262AA Vl30120SG-E3/AW
RATINGS AND OHARAOTERISTIOS cuRvEs
(TA = 25 0C unless otherwise noted)
Resistive or Inductive Load \/(B 3m2r)SG
E A
E E
E’ 3
S 3E 5e EL? o
01 E
w - ‘L?
E 9
g) - (
<(
Mounted on Speoilic Healslnk
0 25 50 75 100 125 I50 0 4 a 12 16 20 24 2a 32 36
Case Temperature (uc) Average Forward Currenl (A)
Fig. 1 — Forward Current Derating Cun/e Fig. 2 — Forward Power Loss Characteristics
Revision: 11-Jul-13 2 Document Number: 89011
For technical questions within your region: DiodesArnericas@vishay.Corn, DiodesAsia@vishay.com, DiodesEurope@Vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishav.comzdoo?9100!!
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