参数资料
型号: V54C3128804VBLT7
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: PLASTIC, TSOP2-54
文件页数: 13/56页
文件大小: 734K
代理商: V54C3128804VBLT7
20
V54C3128(16/80/40)4VB Rev.1.5 March 2006
ProMOS TECHNOLOGIES
V54C3128(16/80/40)4VB
Timing Diagrams
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. Burst Termination
8.1 Termination of a Burst Write Operation
8.2 Termination of a Burst Write Operation
9. AC- Parameters
9.1 AC Parameters for a Write Timing
9.2 AC Parameters for a Read Timing
10. Mode Register Set
11. Power on Sequence and Auto Refresh (CBR)
12. Power Down Mode
13. Self Refresh (Entry and Exit)
14. Auto Refresh (CBR)
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V54C3128804VT 制造商:MOSEL 制造商全称:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
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V54C316162V-5 制造商:MOSEL 制造商全称:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16