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参数资料
| 型号： | V54C3256164VBF7 |
| 厂商： | PROMOS TECHNOLOGIES INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 |
| 封装： | LEAD FREE, MO-210, FBGA-60 |
| 文件页数： | 1/50页 |
| 文件大小： | 728K |
| 代理商： | V54C3256164VBF7 |
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V54C3256(16/80/40)4VB
256Mbit SDRAM
3.3 VOLT, TSOP II / FBGA PACKAGE
16M X 16, 32M X 8, 64M X 4
V54C3256(16/80/40)4VB Rev. 1.0 December 2003
67PC
78PC
System Frequency (fCK)
166 MHz
143 MHz
125 MHz
Clock Cycle Time (tCK3)
6 ns
7 ns
8 ns
Clock Access Time (tAC3) CAS Latency = 3
5.4 ns
6 ns
Clock Access Time (tAC2) CAS Latency = 2
5.4 ns
6 ns
Features
■ 4 banks x 4Mbit x 16 organization
■ 4 banks x 8Mbit x 8 organization
■ 4 banks x16Mbit x 4 organization
■ High speed data transfer rates up to 166 MHz
■ Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■ Single Pulsed RAS Interface
■ Data Mask for Read/Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 3
■ Programmable Wrap Sequence: Sequential or
Interleave
■ Programmable Burst Length:
1, 2, 4, 8 for Sequential Type
1, 2, 4, 8 for Interleave Type
■ Multiple Burst Read with Single Write Operation
■ Automatic and Controlled Precharge Command
■ Random Column Address every CLK (1-N Rule)
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 8192 cycles/64 ms
■ Available in 54 Pin TSOP II, 60 Ball FBGA
■ LVTTL Interface
■ Single +3.3 V
±0.3 V Power Supply
Description
The V54C3256(16/80/40)4VB is a four bank Syn-
chronous DRAM organized as 4 banks x 4Mbit x 16,
4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The
V54C3256(16/80/40)4VB achieves high speed data
transfer rates up to 166 MHz by employing a chip
architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
T/S
6
7PC
7
8PC
Std.
L
U
0
°C to 70°C
Blank
相关PDF资料 |
PDF描述 |
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| V54C3256164VBJ7PC | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 |
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| VT-800-FFR-106A-16M3960000 | TCVCXO, CLIPPED SINE OUTPUT, 16.396 MHz |
| VT-800-FFR-106A-26M0000000 | TCVCXO, CLIPPED SINE OUTPUT, 26 MHz |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| V54C3256164VBS | 制造商:MOSEL 制造商全称:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
| V54C3256164VBT | 制造商:MOSEL 制造商全称:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
| V54C3256164VBUC | 制造商:MOSEL 制造商全称:MOSEL 功能描述:LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 |
| V54C3256164VBUT | 制造商:MOSEL 制造商全称:MOSEL 功能描述:LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 |
| V54C3256164VS | 制造商:MOSEL 制造商全称:MOSEL 功能描述:256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 |
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