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参数资料
| 型号： | V60200PGW-M3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 79K |
| 描述： | DIODE SCHTKY DUAL 200V 30A TO3PW |
| 标准包装： | 750 |
| 系列： | TMBS® |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.48V @ 30A |
| 电流 - 在 Vr 时反向漏电： | 210µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 30A |
| 电压 - (Vr)（最大）： | 200V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3 整包 |
| 供应商设备封装： | TO-3PW |
| 包装： | 管件 |
| 其它名称： | V60200PGW-M3/4W-ND V60200PGW-M3/4WGI |
Document Number: 89184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Feb-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.54 V at I
F
= 5 A
V60200PGW
Vishay General Semiconductor
New Product
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder dip 275 °C max. 10 s, per JESD 22-B106
? Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
?
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94
V-0 flammabi
lity rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
200 V
IFSM
300 A
EAS
at L = 60 mH 150 mJ
VF at IF
= 30 A 0.77 V
TJ
max. 150 °C
TO-3PW
TMBS?
PIN 2
CASE
PIN 1
PIN 3
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60200PGW UNIT
Maximum repetitive peak reverse voltage VRRM
200 V
Maximum average forward rectified curret (fig. 1)
per device
I
per diode 30F(AV)
60
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300 A
Non-repetitive avalanche energy at TJ
= 25 °C, L = 60 mH per diode E
AS
150 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
TJ
= 38 °C ± 2 °C per diode
IRRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 40 to + 150 °C
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