参数资料
型号: V62/05622-01XE
厂商: TEXAS INSTRUMENTS INC
元件分类: 稳压器
英文描述: 12 A SWITCHING REGULATOR, 762 kHz SWITCHING FREQ-MAX, PDSO28
封装: GREEN, PLASTIC, HTSSOP-28
文件页数: 8/24页
文件大小: 689K
代理商: V62/05622-01XE
www.ti.com
DEAD-TIME CONTROL AND MOSFET DRIVERS
OVERCURRENT PROTECTION
THERMAL SHUTDOWN
POWER-GOOD (PWRGD)
SGLS294A – FEBRUARY 2005 – REVISED AUGUST 2007
Adaptive dead-time control prevents shoot-through current from flowing in both N-channel power MOSFETs
during the switching transitions by actively controlling the turnon times of the MOSFET drivers. The high-side
driver does not turn on until the voltage at the gate of the low-side FET is below 2 V. While the low-side driver
does not turn on until the voltage at the gate of the high-side MOSFET is below 2 V.
The high-side and low-side drivers are designed with 300 mA source and sink capability to quickly drive the
power MOSFETs gates. The low-side driver is error plied from VIN, while the high-side drive is supplied from the
BOOT pin. A bootstrap circuit uses an external BOOT capacitor and an internal 2.5
bootstrap switch
connected between the VIN and BOOT pins. The integrated bootstrap switch improves drive efficiency and
reduces external component count.
The cycle-by-cycle current limiting is achieved by sensing the current flowing through the high-side MOSFET and
comparing this signal to a preset overcurrent threshold. The high-side MOSFET is turned off within 200 ns of
reaching the current limit threshold. A 100 ns leading edge blanking circuit prevents current limit false tripping.
Current limit detection occurs only when current flows from VIN to PH when sourcing current to the output filter.
Load protection during current sink operation is provided by thermal shutdown.
The device uses the thermal shutdown to turn off the power MOSFETs and disable the controller if the junction
temperature exceeds 150
°C. The device is released from shutdown automatically when the junction temperature
decreases to 10
°C below the thermal shutdown trip point and starts up under control of the slow-start circuit.
Thermal shutdown provides protection when an over-load condition is sustained for several milliseconds. With a
persistent fault condition, the device cycles continuously; starting up by control of the soft-start circuit, heating up
due to the fault condition, and then shutting down upon reaching the thermal shutdown trip point. This sequence
repeats until the fault condition is removed.
The power good circuit monitors for under voltage conditions on VSENSE. If the voltage on VSENSE is 10%
below the reference voltage, the open-drain PWRGD output is pulled low. PWRGD is also pulled low if VIN is
less than the UVLO threshold or SS/ENA is low, or a thermal shutdown occurs. When VIN
≥ UVLO threshold,
SS/ENA
≥ enable threshold, and VSENSE > 90% of Vref, the open drain output of the PWRGD pin is high. A
hysteresis voltage equal to 3% of Vref and a 35-μs falling edge deglitch circuit prevent tripping of the power good
comparator due to high-frequency noise.
16
Copyright 2005–2007, Texas Instruments Incorporated
Product Folder Link(s): TPS54610-EP
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