参数资料
型号: VF30100SG-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 156K
描述: DIODE SCHOTTKY 30A 100V ITO220AB
产品目录绘图: Circuit
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 350µA @ 100V
安装类型: 通孔
封装/外壳: TO-220-3 隔离片
供应商设备封装: ITO-220AB
包装: 管件
产品目录页面: 1659 (CN2011-ZH PDF)
其它名称: VF30100SG-E3/4WGI
New Product
V301o0sG, VF3o1oosG, VB3o1oosG & vl3o10osG ‘M
Vishay General Semiconductor 7
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 00 unless otherwise noted)Breakdown voltage IR : 10 mA 105 (minimum)
PARAMETER TEST CONDITIONS
0.50
0.60
0.92
Instantaneous fonrvard voltage ("0.44
— TA : 125 “C 0.55
0.76
TA : 25 CC
T 125°C 6.5
Reverse current ‘2) A
Notes
(‘) Pulse test: 300 its pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 3 40 ms
THERMAL cHARAcTERIsTIcs (TA = 25 no unless otherwise noted)
PARAMETER M V3010oSG VF3o100SG VB3o100SG Vl3o100SG
Typical thermal resistance per leg £j
ORDERING FORMATION (Example)
PREFERRED P/N UNIT WEIGHT (9) PACKAGE coDE BASE QUANTITY DELIVERY MODE
To?22oAB vso1ooseeE3/4w ‘raj
-To-22oAB vF3o1oosG-Es/4w 22:11
We vB3o1oosG-E3/4w jjm
mm eoolreel rapeandreel
TO?263AB VB30100SG-E3/SW
TO-262AA V|30100SG-E3/4W
RATINGS AND cHARAcTERIsTIcs cuRVEs
(TA = 25 cc unless otherwise noted)
35
2 30 ‘ j V(B,I)aol0osG
E) 25 vFsolo0SG K A %
8 — §
'2 20 ‘T;s --- \ su) D)
E '5 — — 2‘:
g to g
2 — — 30 25 50 75 I00 I25 I50 0 4 B I2 is 20 24 25 32 36Case Temperature (°C) Average Forward Current (A)
< 5 —
I)
Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88996
2 PDD-Americas@vishay_oom, PDD-Asia@vishay.oom, PDD-Euroge@vishay_oom Revision: 24-Jun-09
相关PDF资料
PDF描述
B82432T1824K INDUCTOR 820UH 80MA 1812 10%
ECC13DCSH CONN EDGECARD 26POS DIP .100 SLD
REC8-4812DRWZ/H3/A/M CONV DC/DC 8W 48VIN 12VOUT DUAL
MBRB10100-E3/8W DIODE SCHOT 10A 100V SGL TO263AB
ECC13DCSD CONN EDGECARD 26POS DIP .100 SLD
相关代理商/技术参数
参数描述
VF30100SG-M3/4W 制造商:Vishay Semiconductors 功能描述:30A,100V,TRENCH SKY RECT.
VF30100S-M3/4W 制造商:Vishay Semiconductors 功能描述:30A,100V,TRENCH SKY RECT.
VF30120C 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120C_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120C-E3/4W 功能描述:肖特基二极管与整流器 30 Amp 120 Volt Dual TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel