参数资料
型号: VF30120SG-E3/4W
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 150K
描述: DIODE SCHOTTKY 30A 120V TO220-3
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 120V
电流 - 平均整流 (Io): 30A
电压 - 在 If 时为正向 (Vf)(最大): 1.28V @ 30A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 120V
安装类型: 通孔
封装/外壳: TO-220-3 隔离片
供应商设备封装: ITO-220AB
包装: 管件
‘lllvVISHAYQVHigh voltage Trench Mos Barrier Schottky RectifierUltra Low VF = 0.47 v at IF = 5 A
www.vishay.oom
V301 2osG, vF3o1 2osG, vB3o1 2osG, vI3o12osG
Vishay General Semiconductor
TMBs?
TO-22lJAB
ITO-22oAB
vao12osG vF3o12oSG
PW‘ PlN 2 PW‘ PlN 2
EH Sale
PIN 3 CASE PIN 3
To-z63AB To-2szAA
vB3o12osG
NC 0 K
A TSlNKPRIMARY cHARAcTERIsTIcs
M
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To—220AB, ITo—220AB,
Package TO-263AB TO-262AA
Diodevariations 3Document Number: 89011
FEATURES
0 Trench MOS Schottky technology
0 Low forward voltage drop, low power losses
0 High efficiency operation @
. Meets MSL level 1, per J-STD-020, LF maximum ROHSpeak of 245 Dc (for TO?263AB package) COMPLIANT
. solder bath temperature 275 °C maximum, 10 s,
per JESD 22?B106 (for TO?220AB, ITO—220AB,
and TO—262AA package)
0 Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
WPICAL APPLIcATIoNs
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR—ing diode, Dc/DC
converters and reverse battery protection.
MEcHANIcAL DATA
Case: TO—220AB, lTO—220AB,
TO?262AAMolding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial gradeTerminals: Matte tin plated leads, solderable per
J-STD?002 and JESD 22?B102
E3 Suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in—lbs max.
TO?263AB and
MAXIMUM RATmGs (TA = 25 cc unless otherwise noted)
PARAMETER VF30120SG VB30120SG
Max. repetitive peak reverse voltage
Max. average forvvard rectified current (fig. 1)Peak fonivard surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T) : 25 “C, L : 60 mH
Peak repetitive reverse current
attp:2us,1kHz,TJ:38°Ct2°CVoltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to neatsinkt : 1 minOperating junction and storage temperature range
-40to+15ORevision: 11-Jul-13
For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.comzdoc?9100!!
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相关代理商/技术参数
参数描述
VF30120SG-M3/4W 制造商:Vishay Semiconductors 功能描述:30A,120V,TRENCH SKY RECT.
VF30120SG-M3-4W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120S-M3/4W 制造商:Vishay Semiconductors 功能描述:30A,120V,TRENCH SKY RECT.
VF30150C 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
VF30150C_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier