参数资料
型号: VFT1045BP-M3/4W
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 77K
描述: DIODE SCHOTTKY 10A 45V TO-220AC
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 45V
电流 - 平均整流 (Io): 10A(DC)
电压 - 在 If 时为正向 (Vf)(最大): 680mV @ 10A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 45V
安装类型: 通孔
封装/外壳: TO-220-2
供应商设备封装: ITO-220AC
包装: 管件
‘lllvVISHAYQ VFT1 045BP7 www'ViShay'C°m Vishay General SemiconductorTrench MOS Barrier Schottky Rectifierfor Pv solar cell Bypass ProtectionUltra Low VF = 0.41 V at IF = 5 A
? FEATURESTMBS . Trench Mos Schottky technology
ITo-2z1:lAc
- Low fonivard voltage drop, low power losses ROHS
0 High efficiency operation c°MPL'A"THALOGEN. Solder bath temperature 275 °C max. 10 s, per FREEJESD 22-B106
. compliant to RoHs Directive 2011/65/EU
. Halogen-tree according to IE0 61249-2-21 definition
"FT1°45BP TYPICAL APPLICATIONS
PiNt . . . .
: For use in solar cell Junction box as a bypass diode for
PW? protection, using DC forward current without reverse bias.
MEcHANIcAL DATAcase: ITO-22oAC
PNMARY cHARAcTER|s |cs Molding compound meets UL 94 V-0 flammability ratingBase P/N-M3 - ha|ogen?free, ROHS compliant, and
commercial grade
3% Terminals: Matte tin plated leads, solderable permm J_STD>002 and JESD 22-8102VF a‘ |F :10 A M3 suffix meets JESD 201 class ‘IA whisker test
P°|arityI AS markedTJ max" (DC forward Current) Mounting Torque- 10 in—lbs maximum
MAXIMUM nATlNos (TA = 25 00 unless otherwise noted)
PARAMETER VFT1045BP
Maximumrepet-twepeakreversevo-tags jj-_Maxlmumocforwardbypasslngcurrentirlgr1 mm-_
Operating Junction temperature range (AC mode)Peak fonlvard surge current 8.3 ms single half sine-wave
Isolation voltage from termal to neatsink t : 1 min
-40to+150
Junction temperature in DC fonuard current
without reverse bias, t 5 1 h
superimposed on rated load
Notes
(I) with neatsink(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal testRevision: 23-Feb-12 1 Document Number: 89453
For technical questions within your region: DiodesAmericas@vishay.Com, DiodesAsia@vishay.com, DiQdesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
PDF描述
VI20100SG-E3/4W DIODE SCHOTTKY 20A 100V TO-262AA
VI30120S-E3/4W DIODE SCHOTTKY 30A 120V TO-262AA
VS-1N5817 DIODE SCHOTTKY 20V 1A DO-204AL
VSB2200S-M3/54 DIODE SCHOTTKY 200V 2A AXIAL
VSSA310S-M3/61T DIODE SCHOTTKY 100V 3A DO-214AC
相关代理商/技术参数
参数描述
VFT1045C 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VFT1045CBP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT1045CBP_1205 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Trench MOS Barrier Schottky Rectifier
VFT1045CBP-M3/4W 功能描述:肖特基二极管与整流器 10A 45V DUAL TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
VFT1045CBP-M3-4W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Trench MOS Barrier Schottky Rectifier