参数资料
型号: VHF36-14IO5
厂商: IXYS
文件页数: 2/3页
文件大小: 0K
描述: RECT BRIDGE 1PH 1400V FO-F-A
标准包装: 10
结构: 单相电桥 - SCR/二极管(布局 1)
SCR 数目,二极管: 2 SCRs,2 个二极管
电压 - 断路: 1400V
电流 - 栅极触发电流 (Igt)(最大): 65mA
电流 - 导通状态 (It (AV))(最大): 36A
电流 - 非重复电涌,50、60Hz (Itsm): 320A,350A
电流 - 维持(Ih): 100mA
安装类型: 底座安装
封装/外壳: X118
包装: 散装
VHF 36
Symbol
Test Conditions
Characteristic Values
10
I R , I D
V T , V F
V R = V RRM ; V D = V DRM
I T , I F = 45 A; T VJ = 25 ° C
T VJ = T VJM
T VJ = 25 ° C
5
0.3
1.45
mA
mA
V
V G
V
1: I GT , T VJ = 125 ° C
2: I GT , T VJ = 25 ° C
3: I GT , T VJ = -40 ° C
V T0
r T
V GT
I GT
For power-loss calculations only (T VJ = 125 ° C)
V D = 6 V; T VJ = 25 ° C
T VJ = -40 ° C
V D = 6 V; T VJ = 25 ° C
T VJ = -40 ° C
T VJ = 125 ° C
0.85
13
1.0
1.2
65
80
50
V
m W
V
V
mA
mA
mA
1
1
2
3
4
5
6
V GD
I GD
I L
I H
T VJ = T VJM ; V D = 2/3 V DRM
T VJ = T VJM ; V D = 2/3 V DRM
I G = 0.3 A; t G = 30 m s; T VJ = 25 ° C
di G /dt = 0.3 A/ m s; T VJ = -40 ° C
T VJ = 125 ° C
T VJ = 25 ° C; V D = 6 V; R GK = ¥
0.2
5
150
200
100
100
V
mA
mA
mA
mA
mA
4: P GAV = 0.5 W
5: P GM = 1 W
I GD , T VJ = 125 ° C 6: P GM = 10 W
0.1
1 10 100 1000 mA
I G
Fig. 1 Gate trigger range
t gd
t q
Q r
R thJC
T VJ = 25 ° C; V D = 1/2 V DRM
I G = 0.3 A; di G /dt = 0.3 A/ m s
T VJ = 125 ° C, I T = 15 A, t P = 300 m s, V R = 100 V
di/dt = -10 A/ m s, dv/dt = 20 V/ m s, V D = 2/3 V DRM
per thyristor (diode); DC current
typ.
2
150
75
1.15
m s
m s
m C
K/W
1000
μ s
t gd
100
typ.
Limit
T VJ = 25 ° C
per module
0.29
K/W
R thJK
per thyristor (diode); DC current
per module
1.55
0.39
K/W
K/W
d S
d A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.6
6.3
50
mm
mm
m/s 2
10
1
10
100
mA 1000
I G
Fig. 2 Gate controlled delay time t gd
? 2000 IXYS All rights reserved
2-3
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