参数资料
型号: VI20100S-E3/4W
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 150K
描述: DIODE SCHOTTKY 20A 100V TO-262AA
产品目录绘图: Circuit
TO-262AA Pin Out
标准包装: 1,000
系列: TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 20A
电压 - 在 If 时为正向 (Vf)(最大): 900mV @ 20A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 100V
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: TO-262AA
包装: 管件
其它名称: VI20100S-E3/4W-ND
VI20100S-E3/4WGI
‘lllvVISHAYQVHigh voltage Trench Mos Barrier Schottky RectifierUltra Low VF = 0.446 v at IF = 5 A?
www.vishay.com
V201 00$, VF201 00$, VB20100S, V|201 00$
Vishay General Semiconductor
TMBs?
TO-22lJAB
ITO-22uAB
v201u0s VF2o1o0S
PW‘ PlN 2 PW‘ PlN 2
EH 3%)
PIN 3 CASE PIN 3
TO-ZGSAB To-26zAA
VB2o1ooS
NC 0 K
. HEW
PRIMARY cHARAcTERI lcs
VFatlF:20A
TO—220AB, ITO-220AB,Package TO-263AB TO-262AA
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation @
Low thermal resistance ROHS
Meets MSL level 1, per J-STD?020, LF maximum c°MPL'ANTpeak of 245 Dc (for TO?263AB package)
. Solder bath temperature 275 °C maximum, 10 s,
per JESD 228106 (for TO-220AB, ITO-220AB, andTO-262AA package)
0 Material categorization: For definitions of compliance
please see www.vishay.cgm/dgc?9§g12
TYPICAL APPLIcATIoNs
For use in high frequency converters, switching power
supplies, freewheeling diodes. OR—ing diode, DC/DC
converters and reverse battery protection.
MEcHANIcAL DATA
Case: TO-220AB. ITO-220AB,TO?262AA
Molding compound meets UL 94 V-0 flammability ratingBase P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads. solderable perJ-STD?0O2 and JESD 22?B102E3 Suffix meets JESD 201 Class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in—Ibs max.
TO?263AB and
MAXIMUM RATINGS (TA = 25 cc unless otherwise noted) F201 OOS VB20100S V|2010OS
PARAMETER
Max. repetitive peak reverse voltage
Max. average fonlvard rectified current (fig. 1)Peak fonlvard surge current 8.3 ms single half
sine-wave superimposed on rated loadNon-repetitive avalanche energy at T‘J : 25 °C, L : 60 mH
Peak repetitive reverse current
attp:2 US,1kHZ,TJ:38°C12 “C
Voltage rate of change (rated VR)Isolation voltage (ITO-220AB only)From terminal (0 heatsinkt : 1 minOperating junction and storage temperature range
-40tO+150
Revision: 14-Aug-13
Document Number: 88975
For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT To SPECIFIC DISCLAIMERS, SET FORTH AT www.visha1.o9mzd9o?9100!!
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