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参数资料
| 型号： | VI20200G-E3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 150K |
| 描述： | DIODE 20A 200V SCHOTTKY TO262AA |
| 标准包装： | 1,000 |
| 系列： | TMBS® |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.7V @ 10A |
| 电流 - 在 Vr 时反向漏电： | 150µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 200V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262AA |
| 包装： | 管件 |
V20200G, VF20200G, VB20200G, VI20200G
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 89117
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.62 V at I
F
= 5 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Low thermal resistance
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C
maximum, 10 s, per JESD
22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94
V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102?
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
200 V
IFSM
110 A
VF at IF
= 10 A 0.71 V
TJ
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations Common cathode
TO-220AB
V20200G VF20200G1
32
2
3
1
K
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
CASE
PIN 3
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
PIN 3
K
VI20200G
VB20200G
TMBS?
ITO-220AB
3
1
2
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT
Max. repetitive peak reverse voltage VRRM
200 V
Max. average forward rectified current (fig. 1)
per device
per diode 10IF(AV)
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
110 A
Non-repetitive avalanche energy at TJ
= 25 °C, L = 60 mH
?
per diode
EAS
60 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
?
TJ
= 38 °C ± 2 °C per diode
IRRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)?
from terminal to heatsink t = 1 min
VAC
1500 V
Operating junction and storage temperature range TJ, TSTG
- 40 to + 150 °C
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| VI-202CU | 制造商:VICOR 制造商全称:Vicor Corporation 功能描述:DC-DC Converters 50 to 200 Watts |
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| VI-202-CU-S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
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