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参数资料
| 型号： | VLA502-01 |
| 厂商： | Powerex Inc |
| 文件页数： | 6/7页 |
| 文件大小： | 0K |
| 描述： | IC IGBT GATE DVR/DC-DC CONV 12A |
| 标准包装： | 4 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 400ns |
| 电流 - 峰： | 12A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 14.2 V ~ 15.8 V |
| 工作温度： | -20°C ~ 60°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 21-SIP 模块 |
| 供应商设备封装： | 模块 |
| 包装： | 散装 |
| 配用： | BG2A-NFH-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1064 |
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
VLA502-01
HYBRID IC IGBT GATE DRIVER +
DC/DC CONVERTER
GENERAL DESCRIPTION
THE VLA502-01 IS A HYBRID INTEGRATED CIRCUIT DESIGNED TO
PROVIDE GATE DRIVE FOR HIGH POWER IGBT MODULES. THIS
CIRCUIT HAS BEEN OPTIMIZED FOR USE WITH POWEREX NFH-
SERIES IGBT MODULES. HOWEVER, THE OUTPUT CHAR-
ACTERISTICS ARE COMPATIBLE WITH MOST MOS GATED
POWER DEVICES. THE VLA502-01 FEATURES A COMPACT
SINGLE-IN-LINE PACKAGE DESIGN. THE UPRIGHT MOUNT-
ING DESIGN MINIMIZES PRINTED CIRCUIT BOARD SPACE TO
ALLOW EF?CIENT AND ?EXIBLE LAYOUT. THE VLA502-01
CONVERTS LOGIC LEVEL CONTROL SIGNALS INTO FULLY ISOLATED
+15V/-8V GATE DRIVE WITH UP TO12A OF PEAK DRIVE CURRENT.
ISOLATED DRIVE POWER IS PROVIDED BY A BUILT IN DC-TO-DC
CONVERTER AND CONTROL SIGNAL ISOLATION IS PROVIDED BY AN
INTEGRATED HIGH SPEED OPTO-COUPLER. SHORT CIRCUIT PROTEC-
TION IS PROVIDED BY MEANS OF DESTAURATION DETECTION.
SHORT CIRCUIT PROTECTION
FIGURE 1 SHOWS A BLOCK DIAGRAM OF A TYPICAL DESATURA-
TION DETECTOR. IN THIS CIRCUIT, A HIGH VOLTAGE FAST RECOVERY
DIODE (D1) IS CONNECTED TO THE IGBT’S COLLECTOR TO MONI-
TOR THE COLLECTOR TO EMITTER VOLTAGE. WHEN THE IGBT IS IN
THE OFF STATE, V CE IS HIGH AND D1 IS REVERSE BIASED. WITH
D1 OFF THE (+) INPUT OF THE COMPARATOR IS PULLED UP TO
THE POSITIVE GATE DRIVE POWER SUPPLY (V+) WHICH IS NOR-
MALLY +15V. WHEN THE IGBT TURNS ON, THE COMPARATORS
(+) INPUT IS PULLED DOWN BY D1 TO THE IGBT’S V CE(SAT) .
THE (-) INPUT OF THE COMPARATOR IS SUPPLIED WITH A ?XED
VOLTAGE (V TRIP ). DURING A NORMAL ON-STATE CONDITION THE
COMPARATOR’S (+) INPUT WILL BE LESS THAN V TRIP AND IT’S OUT-
PUT WILL BE LOW. DURING A NORMAL OFF-STATE CONDITION THE
COMPARATOR’S (+) INPUT WILL BE LARGER THAN V TRIP AND IT’S OUT-
PUT WILL BE HIGH. IF THE IGBT TURNS ON INTO A SHORT CIRCUIT,
MUM ALLOWABLE T TRIP DELAY IS LIMITED BY THE IGBT’S SHORT
CIRCUIT WITHSTANDING CAPABILITY. IN TYPICAL APPLICATIONS
USING POWEREX IGBT MODULES THE RECOMMENDED LIMIT IS
10US.
OPERATION OF THE VLA502-01 DESATURATION DETECTOR
THE POWEREX VLA502-01 INCORPORATES SHORT CIRCUIT
PROTECTION USING DESATURATION DETECTION AS DESCRIBED
ABOVE. A ?OW CHART FOR THE LOGICAL OPERATION OF THE SHORT-
CIRCUIT PROTECTION IS SHOWN IN FIGURE 2. WHEN A DESATURA-
TION IS DETECTED THE HYBRID GATE DRIVER PERFORMS A SOFT
SHUTDOWN OF THE IGBT AND STARTS A TIMED (T TIMER ) 1.5MS
LOCK OUT. THE SOFT TURN-OFF HELPS TO LIMIT THE TRANSIENT
VOLTAGE THAT MAY BE GENERATED WHILE INTERRUPTING THE
LARGE SHORT CIRCUIT CURRENT ?OWING IN THE IGBT. DURING THE
LOCK OUT THE DRIVER PULLS PIN 28 LOW TO INDICATE THE FAULT
STATUS. NORMAL OPERATION OF THE DRIVER WILL RESUME AFTER
THE LOCK-OUT TIME HAS EXPIRED AND THE CONTROL INPUT SIGNAL
RETURNS TO ITS OFF STATE.
ADJUSTMENT OF TRIP TIME
THE VLA502-01 HAS A DEFAULT SHORT-CIRCUIT DETECTION
TIME DELAY (T TRIP ) OF APPROXIMATELY 3μS. THIS WILL PREVENT
ERRONEOUS DETECTION OF SHORT-CIRCUIT CONDITIONS AS LONG
AS THE SERIES GATE RESISTANCE (R G ) IS NEAR THE MINI-
MUM RECOMMENDED VALUE FOR THE MODULE BEING USED.
THE 3μS DELAY IS APPROPRIATE FOR MOST APPLICATIONS SO
ADJUSTMENT WILL NOT BE NECESSARY. HOWEVER, IN SOME LOW
FREQUENCY APPLICATIONS IT MAY BE DESIRABLE TO USE A
LARGER SERIES GATE RESISTOR TO SLOW THE SWITCHING OF
THE IGBT, REDUCE NOISE, AND LIMIT TURN-OFF TRANSIENT
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THE HIGH CURRENT WILL CAUSE THE IGBT’S COLLECTOR-EMITTER
VOLTAGE TO RISE ABOVE V TRIP EVEN THOUGH THE GATE OF THE
IGBT IS BEING DRIVEN ON. THIS ABNORMAL PRESENCE OF
HIGH V CE WHEN THE IGBT IS SUPPOSED TO BE ON IS OFTEN
CALLED DESATURATION . DESATURATION CAN BE DETECTED BY
A LOGICAL AND OF THE DRIVER’S INPUT SIGNAL AND THE COM-
PARATOR OUTPUT. WHEN THE OUTPUT OF THE AND GOES HIGH
A SHORT CIRCUIT IS INDICATED. THE OUTPUT OF THE AND CAN
BE USED TO COMMAND THE IGBT TO SHUT DOWN IN ORDER
TO PROTECT IT FROM THE SHORT CIRCUIT. A DELAY (T TRIP ) MUST BE
PROVIDED AFTER THE COMPARATOR OUTPUT TO ALLOW FOR THE NOR-
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6
MAL TURN ON TIME OF THE IGBT. THE T TRIP DELAY IS SET SO
THAT THE IGBT'S V CE HAS ENOUGH TIME TO FALL BELOW V TRIP
DURING NORMAL TURN ON SWITCHING. IF T TRIP IS SET TOO SHORT,
ERRONEOUS DESATURATION DETECTION WILL OCCUR. THE MAXI-
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FIGURE 1. DESATURATION DETECTOR
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Rev. 8/06
相关PDF资料 |
PDF描述 |
|---|---|
| VLA503-01 | IC IGBT GATE DRIVER INV/AC SERVO |
| VLA504-01 | IC IGBT GATE DVR ISO 3A |
| VLA507-01 | IC IGBT GATE DVR ISO 3A |
| VLA513-01 | IC IGBT GATE DVR ISO 5A |
| VLLDU-1-30W | IC LED DRVR STP-DWN 5PCB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VLA502-01R | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:Universal Gate Drive Prototype Board |
| VLA503 | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Hybrid IC IGBT Gate Driver |
| VLA503-01 | 功能描述:IC IGBT GATE DRIVER INV/AC SERVO RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| VLA503-01R | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:DRIVER FOR IGBT MODULES |
| VLA504-01 | 功能描述:IC IGBT GATE DVR ISO 3A RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
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