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| 型号： | VLA503-01 |
| 厂商： | Powerex Inc |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | IC IGBT GATE DRIVER INV/AC SERVO |
| 标准包装： | 16 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 500ns |
| 电流 - 峰： | 5A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 14 V ~ 15 V |
| 工作温度： | -20°C ~ 60°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 12-SIP |
| 供应商设备封装： | 模块 |
| 包装： | 散装 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT |
| 其它名称： | 835-1065 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
VLA503-01
Hybrid IC IGBT Gate Driver
General Description
The VLA503-01 is a hybrid integrated circuit designed
to provide gate drive for high power IGBT modules.
This circuit has been optimized for use with Powerex
NF-Series and A-Series IGBT modules. However, the
output characteristics are compatible with most MOS
gated power devices. The VLA503-01 features a
compact single-in-line package design. The upright
mounting minimizes required printed circuit board space
to allow efficient and flexible layout. The VLA503-01
converts logic level control signals into fully isolated
+15V/-8V gate drive with up to 5A of peak drive current.
Control signal isolation is provided by an integrated high
speed opto-coupler. Short circuit protection is provided
by means of destauration detection.
Short Circuit Protection
Figure 1 shows a block diagram of a typical desatura-
tion detector. In this circuit, a high voltage fast recovery
diode (D1) is connected to the IGBT’s collector to moni-
tor the collector to emitter voltage. When the IGBT is
in the off state, V CE is high and D1 is reverse biased.
With D1 off the (+) input of the comparator is pulled up
to the positive gate drive power supply (V+) which is
normally +15V. When the IGBT turns on, the compara-
tors (+) input is pulled down by D1 to the IGBT’s V CE(sat) .
The (-) input of the comparator is supplied with a fixed
voltage (V TRIP ). During a normal on-state condition
the comparator’s (+) input will be less than V TRIP and
it’s output will be low. During a normal off-state condi-
tion the comparator’s (+) input will be larger than V TRIP
V+
D1
+
and it’s output will be high. If the IGBT turns on into a
short circuit, the high current will cause the IGBT’s col-
lector-emitter voltage to rise above V TRIP even though
the gate of the IGBT is being driven on. This abnormal
presence of high V CE when the IGBT is supposed to
be on is often called desaturation . Desaturation can
be detected by a logical AND of the driver’s input signal
and the comparator output. When the output of the AND
goes high a short circuit is indicated. The output of the
AND can be used to command the IGBT to shut down in
order to protect it from the short circuit. A delay (t TRIP )
must be provided after the comparator output to allow
for the normal turn on time of the IGBT. The t TRIP delay
is set so that the IGBTs V CE has enough time to fall
below V TRIP during normal turn on switching. If t TRIP
is set too short, erroneous desaturation detection will
occur. The maximum allowable t TRIP delay is limited by
the IGBT’s short circuit withstanding capability. In typical
applications using Powerex IGBT modules the recom-
mended limit is 10μs.
Operation of the VLA503-01 Desaturation Detector
The Powerex VLA503-01 incorporates short circuit
protection using desaturation detection as described
above. A flow chart for the logical operation of the
short-circuit protection is shown in Figure 2. When a
desaturation is detected the hybrid gate driver performs
a soft shut down of the IGBT and starts a timed (t timer )
1.5ms lock out. The soft turn-off helps to limit the tran-
sient voltage that may be generated while interrupting
the large short circuit current flowing in the IGBT. During
the lock out the driver pulls Pin 8 low to indicate the fault
status. Normal operation of the driver will resume after
the lock-out time has expired and the control input signal
returns to its off state.
Adjustment of Trip Time
RG
INPUT
DELAY
ttrip
AND
COMPARE
SHUTDOWN
GATE
DRIVE
Vtrip
IGBT
MODULE
G
C
The VLA503-01 has a default short-circuit detection
time delay (t TRIP ) of approximately 2.5μs. This will
prevent erroneous detection of short-circuit conditions
as long as the series gate resistance (R G ) is near the
minimum recommended value for the module being
used. The 2.5μs delay is appropriate for most applica-
tions so adjustment will not be necessary. However, in
some low frequency applications it may be desirable to
Rev. 04/07
E
Figure 1. Desaturation Detector
E
use a larger series gate resistor to slow the switching of
the IGBT, reduce noise, and limit turn-off transient volt-
ages. When R G is increased, the switching delay time
of the IGBT will also increase. If the delay becomes
相关PDF资料 |
PDF描述 |
|---|---|
| VLA504-01 | IC IGBT GATE DVR ISO 3A |
| VLA507-01 | IC IGBT GATE DVR ISO 3A |
| VLA513-01 | IC IGBT GATE DVR ISO 5A |
| VLLDU-1-30W | IC LED DRVR STP-DWN 5PCB |
| VNC2 DEBUG MODULE | MOD VINCULUM-II DEBUGGR/PROGRAMR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VLA503-01R | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:DRIVER FOR IGBT MODULES |
| VLA504-01 | 功能描述:IC IGBT GATE DVR ISO 3A RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:5 系列:- 配置:低端 输入类型:非反相 延迟时间:600ns 电流 - 峰:12A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:14.2 V ~ 15.8 V 工作温度:-20°C ~ 60°C 安装类型:通孔 封装/外壳:21-SIP 模块 供应商设备封装:模块 包装:散装 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名称:835-1063 |
| VLA504-01R | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:DRIVER FOR IGBT MODULES |
| VLA507 | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Hybrid IC IGBT Gate Driver |
| VLA507_12 | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:BG2C-Universal Gate Drive Prototype Board |
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