- 您现在的位置：买卖IC网 > PDF目录18614 > VN2222LLG (ON Semiconductor)MOSFET N-CH 60V 150MA TO-92 PDF资料下载
参数资料
| 型号： | VN2222LLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 150MA TO-92 |
| 产品目录绘图： | MOSFET TO-92 Pkg |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 150mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 60pF @ 25V |
| 功率 - 最大： | 400mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3（TO-226AA）成形引线 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | VN2222LLGOS |
VN2222LLG
Small Signal MOSFET
150 mAmps, 60 Volts
N ? Channel TO ? 92
Features
? This is a Pb ? Free Device*
MAXIMUM RATINGS
http://onsemi.com
150 mA, 60 V
R DS(on) = 7.5 W
N ? Channel
Rating
Drain ? Source Voltage
Drain ? Gate Voltage (R GS = 1.0 M W )
Gate ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 50 m s)
Drain Current
? Continuous
? Pulsed
Symbol
V DSS
V DGR
V GS
V GSM
I D
I DM
Value
60
60
± 20
± 40
150
1000
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
G
D
S
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
P D
T J , T stg
400
3.2
? 55 to
+150
mW
mW/ ° C
° C
TO ? 92
CASE 29
STYLE 22
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
12
3
MARKING DIAGRAM
Characteristic
Thermal Resistance, Junction ? to ? Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16 ″ from case
for 10 seconds
Symbol
R q JA
T L
Max
312.5
300
Unit
° C/W
° C
& PIN ASSIGNMENT
VN22
22LL
AYWW G
G
1
3
Source
2
Drain
Gate
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2011
April, 2011 ? Rev. 4
1
Publication Order Number:
VN2222LL/D
相关PDF资料 |
PDF描述 |
|---|---|
| 199P9S72 | CABLE STR 9POS MALE-FMALE 6' |
| 5512P12P36 | CABLE STR MALE-R/A MALE 12POS 3' |
| 169P144 | CABLE SGL-END STR PLUG 9POS 12' |
| SH513P3S36 | SHLD MINIMIZER STR EXTENSION |
| FDD4685 | MOSFET P-CH 40V 8.4A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VN2222LL-G | 功能描述:MOSFET 60V 7.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| VN2222LL-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2222LL-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2222LL-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2222LL-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
发布紧急采购，3分钟左右您将得到回复。