参数资料
型号: VSKH56/16
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 晶闸管
英文描述: 94.2 A, 1600 V, SCR, TO-240AA
封装: ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-5
文件页数: 3/10页
文件大小: 708K
代理商: VSKH56/16
www.vishay.com
For technical questions, contact: indmodules@vishay.com
Document Number: 94630
2
Revision: 05-Aug-09
VSK.41.., VSK.56.. Series
Vishay High Power Products
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x
π x I
AV < I < π x IAV
(4) I >
π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM,
IDRM
AT 125 °C
mA
VSK.41
VSK.56
04
400
500
400
15
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56
UNITS
Maximum average on-state current (thyristors)
IT(AV)
180° conduction, half sine wave,
TC = 85 °C
45
60
A
Maximum average forward current (diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
IO(RMS)
100
135
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
850
1200
t = 8.3 ms
890
1256
t = 10 ms
100 % VRRM
reapplied
715
1000
t = 8.3 ms
750
1056
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
Initial TJ =
TJ maximum
3.61
7.20
kA2s
t = 8.3 ms
3.30
6.57
t = 10 ms
100 % VRRM
reapplied
2.56
5.10
t = 8.3 ms
2.33
4.56
Maximum I2
√t for fusing
I2
√t (1)
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
36.1
72
kA2
√s
Maximum value or threshold voltage
VT(TO) (2)
Low level (3)
TJ = TJ maximum
1.08
0.91
V
High level (4)
1.12
1.02
Maximum value of on-state
slope resistance
rt (2)
Low level (3)
TJ = TJ maximum
4.7
4.27
m
Ω
High level (4)
4.5
3.77
Maximum peak on-state or forward voltage
VTM
ITM = π x IT(AV)
TJ = 25 °C
1.81
1.7
V
VFM
IFM = π x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s
150
A/s
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
or
I
(RMS)
I
(RMS)
相关PDF资料
PDF描述
VSKL41/04 70.65 A, 400 V, SCR, TO-240AA
VSKL41/06 70.65 A, 600 V, SCR, TO-240AA
VSKL41/08 70.65 A, 800 V, SCR, TO-240AA
VSKL41/10 70.65 A, 1000 V, SCR, TO-240AA
VSKL41/12 70.65 A, 1200 V, SCR, TO-240AA
相关代理商/技术参数
参数描述
VSKH57/04P 功能描述:SCR模块 400 Volt 60 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK
VSKH57/06P 功能描述:SCR模块 600 Volt 60 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK
VSKH57/08P 功能描述:SCR模块 800 Volt 60 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK
VSKH57/10P 功能描述:SCR模块 1000 Volt 60 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK
VSKH57/12P 功能描述:SCR模块 1200 Volt 60 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK