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参数资料
| 型号： | VSKT170-04PBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 377 A, 400 V, SCR |
| 封装： | ROHS COMPLIANT, MAGN-A-PAK-7 |
| 文件页数： | 4/11页 |
| 文件大小： | 307K |
| 代理商： | VSKT170-04PBF |
www.vishay.com
For technical questions, contact: indmodules@vishay.com
Document Number: 94417
2
Revision: 08-Oct-09
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
VSK.170-
04
400
500
50
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
VSK.250-
04
400
500
50
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
18
1800
1900
60
20
2000
2100
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
UNITS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
170
250
A
85
°C
Maximum RMS on-state current
IT(RMS)
As AC switch
377
555
A
Maximum peak, one-cycle on-state
non-repetitive, surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
5100
8500
t = 8.3 ms
5350
8900
t = 10 ms
100 % VRRM
reapplied
4300
7150
t = 8.3 ms
4500
7500
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
131
361
kA2s
t = 8.3 ms
119
330
t = 10 ms
100 % VRRM
reapplied
92.5
255
t = 8.3 ms
84.4
233
Maximum I2
√t for fusing
I2
√t
t = 0.1 ms to 10 ms, no voltage reapplied
1310
3610
kA2
√s
Low level value or threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)),
TJ = TJ maximum
0.89
0.97
V
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
1.12
1.00
Low level value on-state slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)),
TJ = TJ maximum
1.34
0.60
m
Ω
High level value on-state slope resistance
rt2
(I >
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.96
0.57
Maximum on-state voltage drop
VTM
ITM = π x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
1.60
1.44
V
Maximum holding current
IH
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C
500
mA
Maximum latching current
IL
Anode supply = 12 V, resistive load = 1
Ω,
gate pulse: 10 V, 100 s, TJ = 25 °C
1000
相关PDF资料 |
PDF描述 |
|---|---|
| VSKT170-04 | 377 A, 400 V, SCR |
| VSKT170-08PBF | 377 A, 800 V, SCR |
| VSKT170-08 | 377 A, 800 V, SCR |
| VSKT170-10PBF | 377 A, 1000 V, SCR |
| VSKT170-10 | 377 A, 1000 V, SCR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VSKT170-08 | 功能描述:SCR模块 800 Volt 170 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| VSKT170-08PBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A |
| VSKT170-10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A |
| VSKT170-10PBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A |
| VSKT170-12 | 功能描述:SCR模块 1200 Volt 170 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
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