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参数资料
| 型号： | VSKT91/08 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 210 A, 800 V, SCR |
| 封装： | ROHS COMPLIANT, ADD-A-PAK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 445K |
| 代理商： | VSKT91/08 |
Document Number: 94632
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 17-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 95 A
Vishay Semiconductors
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
12
W
Maximum average gate power
PG(AV)
3.0
Maximum peak gate current
IGM
3.0
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum gate voltage required to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
4.0
TJ = 25 °C
2.5
TJ = 125 °C
1.7
Maximum gate current required to trigger
IGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
270
mA
TJ = 25 °C
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
Maximum RMS insulation voltage
VINS
50 Hz
3000 (1 min)
3600 (1 s)
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.22
°C/W
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
4
Nm
busbar
3
Approximate weight
75
g
2.7
oz.
Case style
JEDEC
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.91..
0.04
0.048
0.063
0.085
0.125
0.033
0.052
0.067
0.088
0.127
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| VSKT91/10 | 210 A, 1000 V, SCR |
| VSKT91/12 | 210 A, 1200 V, SCR |
| VSKT91/14 | 210 A, 1400 V, SCR |
| VSKT91/16 | 210 A, 1600 V, SCR |
| VSKN71/08 | 117.75 A, 800 V, SCR, TO-240AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VSKT91-10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A |
| VSKT91-12 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A |
| VSKT91-14 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A |
| VSKT91-16 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A |
| VSKT9116P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A |
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