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参数资料
| 型号： | VSKV170-10PBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 377 A, 1000 V, SCR |
| 封装： | ROHS COMPLIANT, MAGN-A-PAK-7 |
| 文件页数： | 5/11页 |
| 文件大小： | 307K |
| 代理商： | VSKV170-10PBF |
Document Number: 94417
For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 08-Oct-09
3
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
UNITS
Typical delay time
td
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/s
Vd = 0.67 % VDRM
1.0
s
Typical rise time
tr
2.0
Typical turn-off time
tq
ITM = 300 A; dI/dt = 15 A/s; TJ = TJ maximum;
VR = 50 V; dV/dt = 20 V/s; gate 0 V, 100 Ω
50 to 150
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum
50
60
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
3000
V
Critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, exponential to 67 % rated VDRM
1000
V/s
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
UNITS
Maximum peak gate power
PGM
tp ≤ 5 ms, TJ = TJ maximum
10.0
W
Maximum average gate power
PG(AV)
f = 50 Hz, TJ = TJ maximum
2.0
Maximum peak gate current
+ IGM
tp ≤ 5 ms, TJ = TJ maximum
3.0
A
Maximum peak negative gate voltage
- VGT
tp ≤ 5 ms, TJ = TJ maximum
5.0
V
Maximum required DC gate voltage to trigger
VGT
TJ = - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1
Ω
4.0
TJ = 25 °C
3.0
TJ = TJ maximum
2.0
Maximum required DC gate current to trigger
IGT
TJ = - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1
Ω
350
mA
TJ = 25 °C
200
TJ = TJ maximum
100
Maximum gate voltage that will not trigger
VGD
TJ = TJ maximum, rated VDRM applied
0.25
V
Maximum gate current that willnot trigger
IGD
TJ = TJ maximum, rated VDRM applied
10.0
mA
Maximum rate of rise of turned-on current
dI/dt
TJ = TJ maximum, ITM = 400 A,
rated VDRM applied
500
A/s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
UNITS
Junction operating and storage
temperature range
TJ, TStg
- 40 to 130
°C
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.17
0.125
K/W
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.02
Mounting torque ± 10 %
MAP to heatsink
A mounting compound is recommended and
the torque should be rechecked after a
period of about 3 hours to allow for the
spread of the compound.
4 to 6
Nm
busbar to MAP
Approximate weight
500
g
17.8
oz.
Case style
MAGN-A-PAK
相关PDF资料 |
PDF描述 |
|---|---|
| VSKV170-10 | 377 A, 1000 V, SCR |
| VSKV170-12PBF | 377 A, 1200 V, SCR |
| VSKV170-12 | 377 A, 1200 V, SCR |
| VSKV170-14PBF | 377 A, 1400 V, SCR |
| VSKV170-14 | 377 A, 1400 V, SCR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| VSKV230-08 | 功能描述:SCR模块 230 Amp 800 Volt 7850 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| VSKV250-04 | 功能描述:SCR模块 400 Volt 250 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| VSKV250-08 | 功能描述:SCR模块 800 Volt 250 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| VSKV250-12 | 功能描述:SCR模块 1200 Volt 250 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| VSKV250-12PBF | 功能描述:SCR模块 250 Amp 1200 Volt 550 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
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