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参数资料
| 型号： | VT10200C-E3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 140K |
| 描述： | DIODE SCHOTTKY 200V 10A TO220AB |
| 标准包装： | 1,000 |
| 系列： | TMBS® |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.6V @ 5A |
| 电流 - 在 Vr 时反向漏电： | 150µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 5A |
| 电压 - (Vr)（最大）： | 200V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | VT10200C-E3/4WGI |
Document Number: 89177 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Dec-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.58 V at I
F
= 2.5 A
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
New Product
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
? Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package)
? Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94
V-0 flammabi
lity rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
200 V
IFSM
80 A
VF at IF
= 5.0 A 0.65 V
TJ
max. 150 °C
1
32
2
3
1
K
1
2
K
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
3
1
2
TO-220AB
TO-263AB TO-262AA
ITO-220AB
VT10200C
VFT10200C
VIT10200C
VBT10200C
TMBS?
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT10200C VFT10200C VBT10200C VIT10200C UNIT
Maximum repetitive peak reverse voltage VRRM
200 V
Maximum average forward rectified current
(fig. 1)
per device
I
per diode 5.0F(AV)
10.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
80 A
Non-repetitive avalanche energy
at TJ
= 25 °C, L = 60 mH per diode
EAS
30 mJ
Peak repetitive reverse current
at tp
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C per diode
IRRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
Operating junction and storage temperature range TJ, TSTG
- 40 to + 150 °C
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