参数资料
型号: W15NB50
厂商: 意法半导体
英文描述: N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET
中文描述: N沟道500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET的
文件页数: 3/9页
文件大小: 107K
代理商: W15NB50
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
R
G
= 4.7
(see test circuit, figure 3)
V
DD
= 400 V
I
D
= 7.5 A
V
GS
= 10 V
24
14
34
20
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 15 A
V
GS
= 10 V
60
15
27
80
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
R
G
= 4.7
(see test circuit, figure 5)
I
D
= 15 A
V
GS
= 10 V
15
25
35
20
33
47
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
14.6
58.4
A
A
V
SD
(
)
I
SD
= 15 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 15 A
V
DD
= 100 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
C
680
9
26
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimited by safe operating area
Safe OperatingArea for TO-247
Safe OperatingArea for ISOWATT218
STW15NB50 - STH15NB50FI
3/9
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