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参数资料
| 型号： | W19B320ATB7H |
| 厂商： | Winbond Electronics |
| 文件页数： | 4/53页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 32MBIT 70NS 48TFBGA |
| 标准包装： | 210 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 32M（4M x 8，2M x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -20°C ~ 85°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA（6x8） |
| 包装： | 托盘 |
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W19B320AT/B
1. GENERAL DESCRIPTION
The W19B320AT/B is a 32Mbit, 2.7~3.6-volt flexible bank CMOS flash memory organized as 4M x 8
or 2M × 16 bits. The word-wide ( × 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears
on DQ7-DQ0. The device can be programmed and erased in-system with a standard 3.0-volt power
supply. A 12-volt V PP is not required. The unique cell architecture of the W19B320AT/B results in fast
program/erase operations with extremely low current consumption (compared to other comparable
3-volt flash memory products). The device can also be programmed and erased by using standard
EPROM programmers.
2. FEATURES
Performance
? 2.7~3.6-volt write (program and erase)
operations
? Fast write operation
? Sector erases time: 0.4 Sec (typical)
? Chip erases time: 49 Sec (typical)
? Byte programming time: 5 μ s (typical)
? Read access time: 70 ns
? Typical program/erase cycles:
? 100K
? Twenty-year data retention
? Ultra low power consumption
? Active current (Read): 10 mA (typical)
? Active current (Read while Erase/Program):
21 mA (typical)
? Standby current: 0.2 μ A (typical)
Architecture
? Flexible Bank architectures
? Consist of four banks that customer can
group the bank size as they needed
? Bank 1: 4M; Bank 2: 12M;
Bank 3: 12M; Bank 4: 4M
? Security Sector Size: 256 Bytes
? The Security Sector is an OTP; once the
sector is programmed, it cannot be erased
? Simultaneous Read/write operation
? Data can be continuously read from one bank
? JEDEC standard byte-wide and word-wide
pinouts
? Manufactured on WinStack 0.18 μ m process
technology
? Available packages: 48-pin TSOP and 48-ball
TFBGA (6x8mm)
Software Features
? Compatible with common Flash Memory
Interface (CFI) specification
? Flash device parameters stored directly on
the device
? Allows software driver to identify and use a
variety of different current and future Flash
products
? Erase Suspend/Erase Resume
? Suspends erase operations to allow
programming in same bank
? End of program detection
? Software method: Toggle bit/Data polling
? Unlock Bypass Program command
? Reduces overall programming time when
issuing multiple program command
sequences
Hardware Features
? Ready/#Busy output (RY/#BY)
? Detect program or erase cycle completion
? Hardware reset pin (#RESET)
? Reset the internal state machine to the read
mode
while processing erase/program functions in
other bank with zero latency
-4-
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| W19B320ABT7H | IC FLASH 32MBIT 70NS 48TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W19B320ATT7H | 功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W19B320B | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB-H | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
| W19B320BB-M | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
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