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参数资料
| 型号： | W19B320ATB9L |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封装： | 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 |
| 文件页数： | 34/53页 |
| 文件大小： | 479K |
| 代理商： | W19B320ATB9L |
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W19B320AT/B
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1. GENERAL DESCRIPTION
The W19B320AT/B is a 32Mbit, 2.7~3.6-volt flexible bank CMOS flash memory organized as 4M x 8
or 2M
× 16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears
on DQ7-DQ0. The device can be programmed and erased in-system with a standard 3.0-volt power
supply. A 12-volt VPP is not required. The unique cell architecture of the W19B320AT/B results in fast
program/erase operations with extremely low current consumption (compared to other comparable
3-volt flash memory products). The device can also be programmed and erased by using standard
EPROM programmers.
2. FEATURES
Performance
2.7~3.6-volt write (program and erase)
operations
Fast write operation
Sector erases time: 0.4 Sec (typical)
Chip erases time: 49 Sec (typical)
Byte programming time: 5 μs (typical)
Read access time: 70 ns
Typical program/erase cycles:
100K
Twenty-year data retention
Ultra low power consumption
Active current (Read): 10 mA (typical)
Active current (Read while Erase/Program):
21 mA (typical)
Standby current: 0.2 μA (typical)
Architecture
Flexible Bank architectures
Consist of four banks that customer can
group the bank size as they needed
Bank 1: 4M; Bank 2: 12M;
Bank 3: 12M; Bank 4: 4M
Security Sector Size: 256 Bytes
The Security Sector is an OTP; once the
sector is programmed, it cannot be erased
Simultaneous Read/write operation
Data can be continuously read from one bank
while processing erase/program functions in
other bank with zero latency
JEDEC standard byte-wide and word-wide
pinouts
Manufactured on WinStack 0.18μm process
technology
Available packages: 48-pin TSOP and 48-ball
TFBGA (6x8mm)
Software Features
Compatible with common Flash Memory
Interface (CFI) specification
Flash device parameters stored directly on
the device
Allows software driver to identify and use a
variety of different current and future Flash
products
Erase Suspend/Erase Resume
Suspends erase operations to allow
programming in same bank
End of program detection
Software method: Toggle bit/Data polling
Unlock Bypass Program command
Reduces overall programming time when
issuing multiple program command
sequences
Hardware Features
Ready/#Busy output (RY/#BY)
Detect program or erase cycle completion
Hardware reset pin (#RESET)
Reset the internal state machine to the read
mode
相关PDF资料 |
PDF描述 |
|---|---|
| W19B320BBBH | FLASH 3V PROM, PDSO48 |
| W19B320STT9F | 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| W19L320STT9L | 2M X 16 FLASH 3.3V PROM, 90 ns, PDSO48 |
| W19B324MBT9G | 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| W19B324MTB9L | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W19B320ATT7H | 功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W19B320B | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB-H | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
| W19B320BB-M | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
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