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参数资料
| 型号： | W24L04T-70LE |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| 封装： | 8 X 20 MM, TSOP1-32 |
| 文件页数： | 4/11页 |
| 文件大小： | 153K |
| 代理商： | W24L04T-70LE |
W24L04
- 2 -
TRUTH TABLE
CS
OE
WE
MODE
I/O1
I/O8
VDD CURRENT
H
X
Not Selected
High Z
ISB, ISB1
L
H
Output Disable
High Z
IDD
L
H
Read
Data Out
IDD
L
X
L
Write
Data In
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +4.6
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
LE
-20 to 85
°C
LI
-40 to 85
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VSS = 0V; TA (
°C) = -20 to 85 for LE, -40 to 85 for LI)
PARAMETER
SYM.
TEST
W24L04
UNIT
CONDITIONS
MIN.
MAX.
Operating Power
Voltage
VDD
-
2.7
3.3
V
Input Low Voltage
VIL
-
-0.2
+0.4
V
Input High Voltage
VIH
-
+2.2
VDD +0.3
V
Input Leakage
Current
ILI
VIN = VSS to VDD
-1
+1
A
Output Leakage
Current
ILO
VI/O = VSS to VDD
CS = VIH (min.) or
OE
= VIH (min.) or
WE = VIL (max.)
-1
+1
A
Output Low Voltage
VOL
IOL = +2.1 mA
-
0.4
V
Output High
Voltage
VOH
IOH = -1.0 mA
2.4
-
V
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