- 您现在的位置：买卖IC网 > PDF目录68427 > W25Q128BVEIP (WINBOND ELECTRONICS CORP) 128M X 1 SPI BUS SERIAL EEPROM, PDSO8 PDF资料下载
参数资料
| 型号： | W25Q128BVEIP |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 128M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 8 X 6 MM, GREEN, WSON-8 |
| 文件页数： | 37/74页 |
| 文件大小： | 855K |
| 代理商： | W25Q128BVEIP |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页当前第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页
W25Q128BV
- 42 -
DO
(IO
1)
7.2.23 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in Figure 21.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (20h)
High Impedance
8
9
29
30
31
24-Bit Address
23
22
2
1
0
*
Mode 0
Mode 3
= MSB
*
Figure 21. Sector Erase Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| W25Q128BVFIP | 128M X 1 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q16CLSFIP | 16M X 1 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q16CLDAIG | 16M X 1 SPI BUS SERIAL EEPROM, PDIP8 |
| W25Q16CLZPIP | 16M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q16CLSFIG | 16M X 1 SPI BUS SERIAL EEPROM, PDSO16 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q128BVFIG | 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 3.3V 128Mbit 16M x 8bit 8.5ns 16-Pin SOIC 制造商:Winbond Electronics Corp 功能描述:128MB SPI FLASH |
| W25Q128BVFIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q128FV | 制造商:WINBOND 制造商全称:Winbond 功能描述:SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
| W25Q128FVAIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
| W25Q128FVAIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
发布紧急采购，3分钟左右您将得到回复。