参数资料
型号: W25Q32BVSFIG
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 32M X 1 SPI BUS SERIAL EEPROM, PDSO16
封装: 0.300 INCH, GREEN, SOIC-16
文件页数: 25/79页
文件大小: 1090K
代理商: W25Q32BVSFIG
W25Q32BV
Publication Release Date: April 01, 2011
- 31 -
Revision F
7.2.14 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to input
the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 13a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O instruction (after /CS is
raised and then lowered) does not require the BBh instruction code, as shown in Figure 13b. This reduces
the instruction sequence by eight clocks and allows the Read address to be immediately entered after /CS
is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next instruction (after
/CS is raised and then lowered) requires the first byte instruction code, thus returning to normal operation.
A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before issuing normal
instructions (See 7.2.20 for detail descriptions).
/CS
CLK
DI
(IO
0)
DO
(IO
1)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (BBh)
8
9
10
12
13
14
24
25
26
27
28
29
30
31
6
4
2
0
*
23
/CS
CLK
DI
(IO
0)
DO
(IO
1)
0
32
33
34
35
36
37
38
39
7
5
3
1
*
6
4
2
0
7
5
3
1
6
4
2
0
7
5
3
1
6
4
2
0
7
5
3
1
**
IOs switch from
Input to Output
6
7
22
20
18
16
23
21
19
17
14
12
10
8
15
13
11
9
6
4
2
0
7
5
3
1
6
4
2
0
7
5
3
1
11
15
16
17
18
20
21
22
19
23
1
A23-16
A15-8
A7-0
M7-0
Byte 1
Byte 2
Byte 3
Byte 4
= MSB
*
Figure 13a. Fast Read Dual I/O Instruction Sequence (Initial instruction or previous M5-4
≠ 10)
相关PDF资料
PDF描述
W3EG6466S335BD4S 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
WEDF1M32B-70G2UC5A 1M X 32 FLASH 5V PROM MODULE, 70 ns, CQFP68
WE128K32P-140G2TI 128K X 32 EEPROM 5V MODULE, 125 ns, CQFP68
WE128K32P-150G2TQA 128K X 32 EEPROM 5V MODULE, 125 ns, CQFP68
W7NCF01GH31IS6BG 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
相关代理商/技术参数
参数描述
W25Q32BVSFIP 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVSSAG 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVSSAP 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q32BVSSIG 功能描述:IC SPI FLASH 32MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
W25Q32BVSSIG TR 制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 32M-BIT, 4KB UNIFORM