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参数资料
| 型号： | W26A041B70LE |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封装： | TFBGA-48 |
| 文件页数： | 7/11页 |
| 文件大小： | 189K |
| 代理商： | W26A041B70LE |
Preliminary W26A041
Publication Release Date: April 19, 2002
- 5 -
Revision A1
AC Characteristics, continued
(VSS = 0V; TA (
°C) = -20 to 85 for LE, -40 to 85 for LI)
Read Cycle
PARAMETER
SYM.
W26A041
UNIT
MIN.
MAX.
Read Cycle Time
TRC
70
-
nS
Address Access Time
TAA
-
70
nS
Chip Select Access Time
TACS
-
70
nS
Output Enable to Output Valid
TAOE
-
35
nS
#UB, #LB Access Tim
TBA
-
70
nS
Chip Selection to Output in Low Z
TCLZ*
10
-
nS
Output Enable to Output in Low Z
TOLZ*
5
-
nS
#UB, #LB Enable to Output in Low Z
TBLZ*
5
-
nS
Chip Deselection to Output in High Z
TCHZ*
-
30
nS
Output Disable to Output in High Z
TOHZ*
-
30
nS
#UB, #LB Disable to Output in High Z
TBHZ*
-
30
nS
Output Hold from Address Change
TOH
10
-
nS
These parameters are sampled but not 100% tested
Write Cycle
PARAMETER
SYM.
W26A041
UNIT
MIN.
MAX.
Write Cycle Time
TWC
70
-
nS
Chip Selection to End of Write
TCW
60
-
nS
Address Valid to End of Write
TAW
60
-
nS
#UB, #LB Select to End of Write
TBW
60
-
nS
Address Setup Time
TAS
0
-
nS
Write Pulse Width
TWP
55
-
nS
Write Recovery Time
#CS1, CS2, #WE
TWR
0
-
nS
Data Valid to End of Write
TDW
40
-
nS
Data Hold from End of Write
TDH
0
-
nS
Write to Output in High Z
TWHZ*
-
30
nS
Output Disable to Output in High Z
TOHZ*
-
30
nS
Output Active from End of Write
TOW
5
-
nS
These parameters are sampled but not 100% tested
相关PDF资料 |
PDF描述 |
|---|---|
| W26A041B70LI | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
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| W26B021T70LE | 128K X 16 STANDARD SRAM, 70 ns, PDSO48 |
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