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参数资料
| 型号： | W26L04AH-10 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封装： | TSOP2-44 |
| 文件页数： | 5/10页 |
| 文件大小： | 144K |
| 代理商： | W26L04AH-10 |
Preliminary W26L04A
- 4 -
AC Characteristics, continued
(VDD = 3.3V
±5%, VSS = 0V, TA = -40 to +85° C for Industrial Grade, TA = 0 to 70° C for Commercial Grade)
Read Cycle
PARAMETER
SYM.
W26L04A-10
W26L04A-12
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
TRC
10
-
12
-
nS
Address Access Time
TAA
10
12
nS
Chip Select Access Time
TACS
10
12
nS
Output Enable to Output Valid
TOE
5
6
nS
UB , LB Access Time
TBA
5
6
nS
Output Hold from Address Change
TOH
3
3
nS
Chip Select to Output in Low Z
TCLZ*
3
3
nS
Chip Deselect to Output in High Z
TCHZ*
5
6
nS
Output Enable to Output in Low Z
TOLZ*
0
0
nS
Output Disable to Output in High Z
TOHZ*
5
6
nS
UB , LB Select to Output in Low Z
TBLZ*
0
0
nS
UB , LB Deselect to Output in High Z
TBHZ*
5
6
nS
These parameters are sampled but not 100% tested.
Write Cycle
PARAMETER
SYM.
W26L04A-10
W26L04A-12
UNIT
MIN.
MAX.
MIN.
MAX.
Write Cycle Time
TWC
10
12
nS
Chip Select to End of Write
TCW
9
10
nS
Address Valid to End of Write
TAW
9
10
nS
Address Setup Time
TAS
0
0
nS
UB , LB Select to End of Write
TBW
9
10
nS
Write Pulse Width
TWP
9
10
nS
Write Recovery Time
CS , WE
TWR
0
0
nS
Data Valid to End of Write
TDW
6
7
nS
Data Hold from End of Write
TDH
0
0
nS
Write to Output in High Z
TWHZ*
6
7
nS
End of Write to Output Active
TOW*
3
3
nS
These parameters are sampled but not 100% tested.
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