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参数资料
| 型号： | W26NM50 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 500V - 0.10ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET |
| 中文描述： | N沟道500V - 0.10ohm - 26A条至247齐纳商标保护的MDmesh功率MOSFET |
| 文件页数： | 2/9页 |
| 文件大小： | 189K |
| 代理商： | W26NM50 |
STW26NM50
2/9
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
26A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Table 4: Thermal Data
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
T
l
Maximum Lead Temperature For Soldering Purpose
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
500
V
500
V
± 30
V
30
A
18.9
A
120
A
313
W
2.5
W/°C
6000
V
15
V/ns
Operating Junction Temperature
-55 to 150
°C
0.4
62.5
°C/W
°C/W
°C
300
Parameter
Max Value
13
Unit
A
740
mJ
Parameter
Test Conditions
Igss=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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