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参数资料
| 型号： | W28J320 |
| 英文描述： | FLASH |
| 中文描述： | 闪光 |
| 文件页数： | 8/48页 |
| 文件大小： | 416K |
| 代理商： | W28J320 |
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W28J320B/T
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7. PRINCIPLES OF OPERATION
The W28J320B/T flash memory includes an on-chip WSM to manage block erase, full chip erase,
word/byte write and lock-bit configuration functions. It allows for: fixed power supplies during block
erase, full chip erase, word/byte write and lock-bit configuration, and minimal processor overhead with
RAM-like interface timings.
After initial device power-up or return from reset mode (see Bus Operations Section), the device
defaults to read array mode. Manipulation of external memory control pins allow array read, standby
and output disable operations.
Status register and identifier codes can be accessed through the CUI independent of the V
PP
voltage.
High voltage on V
PP
enables successful block erase, full chip erase, word/byte write and lock-bit
configurations. All functions associated with altering memory contents (block erase, full chip erase,
word/byte write, lock-bit configuration, status and identifier codes) are accessed via the CUI and
verified through the status register.
Commands are written using standard microprocessor write timings. The CUI contents serve as input
to the WSM, which controls the block erase, full chip erase, word/byte write and lock-bit configuration.
The internal algorithms are regulated by the WSM, including pulse repetition, internal verification and
margining of data. Addresses and data are internally latched during write cycles. Writing the
appropriate command outputs array data, accesses the identifier codes or outputs status register
data.
Interface software that initiates and polls progress of block erase, full chip erase, word/byte write and
lock-bit configuration can be stored in any block. This code is copied to and executed from system
RAM during flash memory updates. After successful completion, reads are again possible via the
Read Array command. Block erase suspend allows system software to suspend a block erase to
read/write data from/to blocks other than that which is suspend. Word/byte write suspend allows
system software to suspend a word/byte write to read data from any other flash memory array
location.
Data Protection
When V
PP
≤
V
PPLK
, memory contents cannot be altered. The CUI, with two-step block erase, full chip
erase, word/byte write or lock-bit configuration command sequences, provides protection from
unwanted operations even when high voltage is applied to V
PP
. All write functions are disabled when
V
DD
is below the write lockout voltage V
LKO
or when #RESET is at V
IL
. The device's block locking
capability provides additional protection from inadvertent code or data alteration by gating block erase,
full chip erase and word/byte write operations. Refer to Table 5 for write protection alternatives.
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相关代理商/技术参数 |
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|---|---|
| W28NK60Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET |
| W28-SQ11A-10 | 功能描述:CIRCUIT BREAK 10A W/SWITCH RoHS:否 类别:过电压，电流，温度装置 >> 断路器 系列:W28 标准包装:3 系列:AS168X 断路器类型:热磁动式 电压:65VDC，277/480VAC 电流 - 跳闸(It):30A 极数:3 触动器类型:按片 安装类型:DIN 轨道 其它名称:4420.02104420.0210-ND486-2338AS168X-CB3G300-NDCBE AS168X-CB3G300 |
| W28-SQ11A-15 | 制造商:TE Connectivity 功能描述: |
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