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参数资料
| 型号： | W28NK60Z |
| 厂商： | 意法半导体 |
| 元件分类： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 3/10页 |
| 文件大小： | 216K |
| 代理商： | W28NK60Z |
3/10
STW28NK60Z
TABLE 7: ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
On /Off
Table 8: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source Breakdown
Voltage
I
D
= 1 mA, V
GS
= 0
600
S
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
1
50
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V
± 10
μA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 150 μA
3
3.75
4.5
V
R
DS(on
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 13.5 A
0.155
0.185
Parameter
Test Conditions
V
DS
= 15 V, I
D
= 13.5 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
26
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
6350
615
125
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 300 V, I
D
= 14 A,
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load see Figure 17))
50
45
135
32
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V, I
D
= 28 A,
V
GS
= 10 V
189
34
103
264
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
27
108
Unit
A
A
Source-drain Current
I
SD
= 27 A, V
GS
= 0
I
SD
= 28 A, di/dt = 100 A/μs
V
DD
= 35V, T
j
= 25
°
C
(see test circuit Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
820
10
23.5
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 28 A, di/dt = 100 A/μs
V
DD
= 35V, T
j
= 150
°
C
(see test circuit Figure 5)
1020
14
27.5
ns
μC
A
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