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参数资料
| 型号： | W29C022T-12 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 256K X 8 FLASH 5V PROM, 120 ns, PDSO32 |
| 封装： | TSOP1-32 |
| 文件页数： | 2/21页 |
| 文件大小： | 303K |
| 代理商： | W29C022T-12 |
W29C022
- 10 -
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to VSS Potential
-0.5 to 7.0
V
Operating Temperature
0 to +70
°C
Storage Temperature
-65 to +150
°C
D.C. Voltage on Any Pin to Ground Potential Except A9
-0.5 to VDD +1.0
V
Transient Voltage (<20 nS) on Any Pin to Ground Potential
-1.0 to VDD +1.0
V
Voltage on A9 and #OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 5.0V
±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN.
TYP.
MAX.
#CE = #OE = VIL, #WE = VIH,
all DQs open
Address inputs = VIL/VIH,
at f = 5 MHz
-
50
Power Supply Current
ICC
#CE = #OE = VIL, #WE = VIH,
all DQs open
Address inputs = VIL/VIH,
at f = 2 MHz
-
30
mA
Standby VDD Current
(TTL input)
ISB1
#CE = VIH, all DQs open
Other inputs = VIL/VIH
-
2
3
mA
Standby VDD Current
(CMOS input)
ISB2
#CE = VDD -0.3V, all DQs open
-
20
100
A
Input Leakage Current
ILI
VIN = Vss to VDD
-
10
A
Output Leakage Current
ILO
VIN = Vss to VDD
-
10
A
Input Low Voltage
VIL
-
0.8
V
Input High Voltage
VIH
-
2.0
-
V
Output Low Voltage
VOL
IOL = 2.0 mA
-
0.45
V
Output High Voltage
VOH1
IOH = -400
A
2.4
-
V
Output High Voltage
CMOS
VOH2
IOH = -100
A; VDD = 4.5V
4.2
-
V
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相关代理商/技术参数 |
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