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参数资料
| 型号： | W29EE012S-90 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 128K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
| 文件页数： | 1/19页 |
| 文件大小： | 242K |
| 代理商： | W29EE012S-90 |
W29EE012
128K
× 8 CMOS FLASH MEMORY
Publication Release Date: March 26, 2002
- 1 -
Revision A3
GENERAL DESCRIPTION
The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
× 8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W29EE012 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory products).
The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39 S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Page program/erase cycles: 1,000
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Automatic program timing with internal VPP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
相关PDF资料 |
PDF描述 |
|---|---|
| W29F102P-35B | 64K X 16 FLASH 5V PROM, 35 ns, PQCC44 |
| W29F201S-55B | 128K X 16 FLASH 5V PROM, 55 ns, PDSO44 |
| W29F201S-70B | 128K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
| W29GL032CT7B | 2M X 16 FLASH 3V PROM, 80 ns, PBGA64 |
| W29GL064CL9B | 64M X 1 FLASH 3V PROM, 100 ns, PBGA64 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W29EE512 | 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512-12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| W29EE512-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| W29EE512-90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| W29EE512P-12 | 制造商:WINBOND 制造商全称:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
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