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参数资料
| 型号： | W3DG6432V7D2 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 4/5页 |
| 文件大小： | 121K |
| 代理商： | W3DG6432V7D2 |
June 2003 Rev. 1
ECO #16361
W3DG6432V-D2
4
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specications without notice.
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, 0°C≤TA≤70°C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCC/VSSQ)
Parameters
Symbol
Conditions
Versions
Units
Note
133
100
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
740
700
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
20
mA
ICC2PS
CKE & CK ≤ VIL(max), tCC = ∞
20
mA
Precharge Standby Current
in Non-Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns
Input signals are charged one time during 20
130
mA
ICC2NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC= ∞
Input signals are stable
115
mA
Active standby current in power-
down mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
50
mA
ICC3PS
CKE & CK ≤ VIL(max), tCC = ∞
50
Active standby in current non
power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are charged one time during 20ns
280
mA
ICC3NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC = ∞
input signals are stable
240
mA
Operating current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
860
720
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
980
940
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
40
mA
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相关代理商/技术参数 |
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| W3DG6432V-D2 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB- 32Mx64 SDRAM UNBUFFERED |
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| W3DG6433V10JD1 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM, UNBUFFERED |
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