参数资料
型号: W3DG6463V7D2-SG
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
封装: ROHS COMPLIANT, DIMM-168
文件页数: 4/10页
文件大小: 273K
代理商: W3DG6463V7D2-SG
July 2005
Rev. 2
W3DG6463V-D2
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 ~ 4.6
V
Storage Temperature
TSTG
-55 ~ +150
°C
Power Dissipation
PD
16
W
Short Circuit Current
IOS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: VSS = 0V, 0°C ≤ TA ≤ 70°C
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
VCC
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0
VCCQ+0.3
V
1
Input Low Voltage
VIL
-0.3
0.8
V
2
Output High Voltage
VOH
2.4
V
IOH= -2mA
Output Low Voltage
VOL
0.4
V
IOL= -2mA
Input Leakage Current
ILI
-10
10
A
3
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is
≤ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VCCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
TA = 23°C, f = 1MHz, VCC = 3.3V, VREF = 1.4V ± 200mV
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
CIN1
100
pF
Input Capacitance (RAS#,CAS#,WE#)
CIN2
100
pF
Input Capacitance (CKE0)
CIN360
pF
Input Capacitance (CK0-CK3)
CIN445
pF
Input Capacitance (CS0#,CS3#)
CIN535
pF
Input Capacitance (DQM0-DQM7)
CIN620
pF
Input Capacitance (BA0-BA1)
CIN7
100
pF
Data input/output capacitance (DQ0-DQ63)
COUT
15
pF
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