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参数资料
| 型号： | W3DG727V10D2 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 8M X 72 SYNCHRONOUS DRAM MODULE, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 4/5页 |
| 文件大小： | 154K |
| 代理商： | W3DG727V10D2 |
Sept. 2002
Rev. 0
W3DG727V-D2
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specications without notice.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, 0°C TA +70°C)
Notes:
1.
Measured with outputs open.
2.
Refresh period is 64ms.
3.
Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCCQ/VssQ)
Parameter
Symbol
Conditions
Version
Units
Note
133
100
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
675
630
mA
1
Precharge Standby Current
Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
10
mA
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
10
Precharge Standby Current
Non Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are charged one time during 20
135
mA
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
Input signals are stable
55
Active standby current
Power Down Mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
30
mA
ICC3PS
CKE & CLK ≤ VIL(max), tcc = ∞
30
Active standby current
Non Power Down Mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
225
mA
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
Input signals are stable
140
mA
Operating current
(Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
1,035
855
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
1,215
1,125
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
10
mA
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