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参数资料
| 型号： | W3E232M16S-250STC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封装： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件页数： | 21/22页 |
| 文件大小： | 0K |
| 代理商： | W3E232M16S-250STC |
W3E232M16S-XSTX
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
December 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY*
process of precharging.
TABLE 1 – BURST DEFINITION
Burst
Length
Starting Column
Address
Order of Accesses Within a Burst
Type = Sequential
Type = Interleaved
2
A0
0
0-1
1
1-0
4
A1
A0
0
0-1-2-3
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
1
3-0-1-2
3-2-1-0
8
A2
A1
A0
0
0-1-2-3-4-5-6-7
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
0
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
NOTES:
1. For a burst length of two, A1-Ai select two-data-element block; A0
selects the starting column within the block.
2. For a burst length of four, A2-Ai select four-data-element block; A0-1
select the starting column within the block.
3. For a burst length of eight, A3-Ai select eight-data-element block;
A0-2 select the starting column within the block.
4. Whenever a boundary of the block is reached within a given
sequence above, the following access wraps within the block.
COMMAND
READ
NOP
CL = 2.5
DON'T CARE
TRANSITIONING DATA
DQ
DQS
T0
T1
T2
T2n
T3
T3n
COMMAND
READ
NOP
CL = 2
DQ
DQS
CLK
CLK#
T0
T1
T2
T2n
T3
T3n
Burst Length = 4 in the cases shown
Shown with nominal tAC and nominal tDSDQ
DATA
CLK
CLK#
FIGURE 4 – CAS LATENCY
AUTO PRECHARGE
AUTO PRECHARGE is a feature which performs the
same individual-bank PRECHARGE function described
above, but without requiring an explicit command. This is
accomplished by using A10 to enable AUTO PRECHARGE
in conjunction with a specic READ or WRITE command.
A precharge of the bank/row that is addressed with the
READ or WRITE command is automatically performed
upon completion of the READ or WRITE burst. AUTO
PRECHARGE is nonpersistent in that it is either enabled
or disabled for each individual READ or WRITE command.
The device supports concurrent auto precharge if the
command to the other bank does not interrupt the data
transfer to the current bank.
AUTO PRECHARGE ensures that the precharge is
initiated at the earliest valid stage within a burst. This
“earliest valid stage” is determined as if an explicit
precharge command was issued at the earliest possible
time, without violating tRAS (MIN).The user must not issue
another command to the same bank until the precharge
time (tRP) is completed.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E232M16S-250STCG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
| W3E232M16S-250STI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
| W3E232M16S-250STIG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
| W3E232M16S-266STC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
| W3E232M16S-266STCG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
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