| 型号: | W3E32M64S-200BI |
| 厂商: | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类: | DRAM |
| 英文描述: | 32M X 64 DDR DRAM, 0.8 ns, PBGA219 |
| 封装: | 25 X 25 MM, PLASTIC, BGA-219 |
| 文件页数: | 8/17页 |
| 文件大小: | 847K |
| 代理商: | W3E32M64S-200BI |

相关PDF资料 |
PDF描述 |
|---|---|
| W3E32M64S-333BC | 32M X 64 DDR DRAM, 0.7 ns, PBGA219 |
| W3E64M72S-333BI | 64M X 72 SYNCHRONOUS DRAM, 0.7 ns, PBGA219 |
| W3HG2128M72AEF665F1MAG | 256M X 72 DDR DRAM MODULE, DMA240 |
| W7NCF02GH10CS3JG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF02GH10CS4HG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M64S-200BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-200SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-200SBI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M64S-200SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-250BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |