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参数资料
| 型号： | W3E32M72S-266BM |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 16/19页 |
| 文件大小： | 739K |
| 代理商： | W3E32M72S-266BM |
W3E32M72S-XBX
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
device loses power. The enabling of the DLL should always
be followed by a LOAD MODE REGISTER command to the
mode register (BA0/BA1 both LOW) to reset the DLL.
The extended mode register must be loaded when all
banks are idle and no bursts are in progress, and the
controller must wait the specied time before initiating
any subsequent operation. Violating either of these
requirements could result in unspecied operation.
OUTPUT DRIVE STRENGTH
The normal full drive strength for all outputs are specied to
be SSTL2, Class II. The DDR SDRAM supports an option
for reduced drive. This option is intended for the support
of the lighter load and/or point-to-point environments. The
selection of the reduced drive strength will alter the DQs
and DQSs from SSTL2, Class II drive strength to a reduced
drive strength, which is approximately 54 percent of the
SSTL2, Class II drive strength.
DLL ENABLE/DISABLE
When the part is running without the DLL enabled, device
functionality may be altered. The DLL must be enabled for
normal operation. DLL enable is required during power-
up initialization and upon returning to normal operation
after having disabled the DLL for the purpose of debug or
evaluation. (When the device exits self refresh mode, the
DLL is enabled automatically.) Any time the DLL is enabled,
200 clock cycles with CKE high must occur before a READ
command can be issued.
ALLOWABLE OPERATING
FREQUENCY (MHz)
SPEED
CAS
LATENCY = 2
CAS
LATENCY = 2.5
-200
≤ 75
≤ 100
-250
≤ 100
≤ 125
-266
≤ 100
≤ 133
-333
-
≤ 166
TABLE 2 - CAS LATENCY
COMMANDS
The Truth Table provides a quick reference of available
commands. This is followed by a written description of
each command.
DESELECT
The DESELECT function (CS# High) prevents new
commands from being executed by the DDR SDRAM.
The SDRAM is effectively deselected. Operations already
in progress are not affected.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to perform
a NOP to the selected DDR SDRAM (CS# is LOW while
RAS#, CAS#, and WE# are high). This prevents unwanted
commands from being registered during idle or wait states.
Operations already in progress are not affected.
LOAD MODE REGISTER
The Mode Registers are loaded via inputs A0-12. The
LOAD MODE REGISTER command can only be issued
when all banks are idle, and a subsequent executable
command cannot be issued until tMRD is met.
ACTIVE
The ACTIVE command is used to open (or activate) a
row in a particular bank for a subsequent access. The
value on the BA0, BA1 inputs selects the bank, and the
address provided on inputs A0-12 selects the row. This row
remains active (or open) for accesses until a PRECHARGE
command is issued to that bank. A PRECHARGE
command must be issued before opening a different row
in the same bank.
READ
The READ command is used to initiate a burst read
access to an active row. The value on the BA0, BA1 inputs
selects the bank, and the address provided on inputs A0-9
selects the starting column location. The value on input
A10 determines whether or not AUTO PRECHARGE is
used. If AUTO PRECHARGE is selected, the row being
accessed will be precharged at the end of the READ burst;
if AUTO PRECHARGE is not selected, the row will remain
open for subsequent accesses.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M72S-266SBC | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M72S-266SBI | 制造商:White Electronic Designs 功能描述:32M X 72 DDR, 2.5V, 266 MHZ, 208 PBGA, IND TEMP CUSTOM - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72S-266SBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 DDR SDRAM |
| W3E32M72S-333BC | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 333 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M72S-333BI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 333 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
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