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参数资料
| 型号： | W3E32M72S-333BC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.7 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 2/19页 |
| 文件大小： | 739K |
| 代理商： | W3E32M72S-333BC |
W3E32M72S-XBX
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
A simple algorithm for meeting both refresh and DLL
requirements is to apply NOPs for tXSNR time, then a DLL
Reset and NOPs for 200 additional clock cycles before
applying any other command.
* Self refresh available in commercial and industrial temperatures only.
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to Vss
-0.5V to VCCQ +0.5V
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE:Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions greater than those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CK/CK#
CI1
8
pF
Addresses, BA0-1 Input Capacitance
CA
32
pF
Input Capacitance: All other input-only pins
CI2
10
pF
Input/Output Capacitance: I/Os
CIO
12
pF
BGA THERMAL RESISTANCE
Description
Symbol
Max
Units
Notes
Junction to Ambient (No Airow)
Theta JA
13.7
°C/W
1
Junction to Ball
Theta JB
10.3
°C/W
1
Junction to Case (Top)
Theta JC
4.6
°C/W
1
Refer to "PBGA Thermal Resistance Correlation" Application Note at www.whiteedc.com in the application notes section for modeling conditions.
相关PDF资料 |
PDF描述 |
|---|---|
| W3E32M72S-250BC | 32M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| W3E32M72S-250BI | 32M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| W3E32M72S-266BI | 32M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E32M72SR-266SBM | 32M X 72 DDR DRAM, 0.75 ns, PBGA208 |
| W3E32M72SR-250SBC | 32M X 72 DDR DRAM, 0.8 ns, PBGA208 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M72S-333BI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 333 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M72S-333BM | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 333 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M72S-333SBC | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 333 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M72S-333SBI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 333 MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M72S-333SBM | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR, 2.5V, 333 MHZ, 208 PBGA, MIL-TEMP. - Bulk |
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