参数资料
型号: W3E64M72S-266SBM
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 64M X 72 DDR DRAM, 0.75 ns, PBGA219
封装: 25 X 32 MM, PLASTIC, BGA-219
文件页数: 3/19页
文件大小: 496K
代理商: W3E64M72S-266SBM
W3E64M72S-XSBX
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2007
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to Vss
-0.5V to VCCQ +0.5V
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
Maximum Junction Temperature
125
°C
NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions greater than those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CK/CK#
CI1
8
pF
Addresses, BA0-1 Input Capacitance
CA
38
pF
Input Capacitance: All other input-only pins
CI2
9pF
Input/Output Capacitance: I/Os
CIO
8
pF
BGA THERMAL RESISTANCE
Description
Symbol
Max
Units
Notes
Junction to Ambient (No Airow)
Theta JA
10.1
°C/W
1
Junction to Ball
Theta JB
10.6
°C/W
1
Junction to Case (Top)
Theta JC
2.5
°C/W
1
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.whiteedc.com in the application notes section for modeling conditions.
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