- 您现在的位置：买卖IC网 > PDF目录68452 > W3EG6433S335BD4 (MICROSEMI CORP-PMG MICROELECTRONICS) 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 PDF资料下载
参数资料
| 型号： | W3EG6433S335BD4 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 |
| 封装： | SODIMM-200 |
| 文件页数： | 8/13页 |
| 文件大小： | 342K |
| 代理商： | W3EG6433S335BD4 |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG6433S-AD4
-BD4
May 2005
Rev. 1
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 to 3.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 to 3.6
V
Storage Temperature
TSTG
-55 to +150
°C
Power Dissipation
PD
8W
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC CHARACTERISTICS
0°C TA 70°C, VCC = 2.5V ± 0.2V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
2.3
2.7
V
Supply Voltage
VCCQ
2.3
2.7
V
Reference Voltage
VREF
VCCQ/2 - 50mV
VCCQ/2 + 50mV
V
Termination Voltage
VTT
VREF - 0.04
VREF + 0.04
V
Input High Voltage
VIH
VREF + 0.15
VCCQ + 0.3
V
Input Low Voltage
VIL
-0.3
VREF - 0.15
V
Output High Voltage
VOH
VTT + 0.76
—
V
Output Low Voltage
VOL
—VTT - 0.76
V
CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 3.3V, VREF =1.4V ± 200mV
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
CIN1
29
pF
Input Capacitance (RAS#, CAS#, WE#)
CIN2
29
pF
Input Capacitance (CKE0)
CIN3
29
pF
Input Capacitance (CK0,CK0#)
CIN4
5.5
pF
Input Capacitance (CS0#)
CIN5
29
pF
Input Capacitance (DQM0-DQM8)
CIN6
8pF
Input Capacitance (BA0-BA1)
CIN7
29
pF
Data input/output capacitance (DQ0-DQ63)(DQS)
COUT
8pF
相关PDF资料 |
PDF描述 |
|---|---|
| W3EG6433S335JD3 | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 |
| W3EG6433S262JD3 | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 |
| W3EG6433S263JD3 | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 |
| W3EG6437S335D4M | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 |
| W3EG6437S202D4M | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3EG6433S335D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx64 DDR SDRAM UNBUFFERED |
| W3EG6433S335JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx64 DDR SDRAM UNBUFFERED |
| W3EG6433S-AD4 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| W3EG6433S-BD4 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| W3EG6433S-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx64 DDR SDRAM UNBUFFERED |
发布紧急采购，3分钟左右您将得到回复。