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参数资料
| 型号： | W3EG6433S335JD3 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封装： | DIMM-184 |
| 文件页数： | 9/12页 |
| 文件大小： | 262K |
| 代理商： | W3EG6433S335JD3 |
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG6433S-D3
-JD3
November 2005
Rev. 2
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C TA 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Includes DDR SDRAM component only
Parameter
Symbol Conditions
DDR333@CL=2.5
Max
DDR266@CL=2
Max
DDR266@CL=2/2.5
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge;
tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
680
640
mA
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC=tRC (MIN);
tCK=tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
880
800
mA
Precharge Power-
Down Standby
Current
IDD2P
All device banks idle; Power-down
mode; tCK=tCK (MIN); CKE=(low)
24
rnA
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK (MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. VIN = VREF for
DQ, DQS and DM.
200
180
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-Down
mode; tCK (MIN); CKE=(low)
240
200
mA
Active Standby
Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS
(MAX); tCK=tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
360
320
mA
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; TCK= TCK (MIN); lOUT
= 0mA.
1,120
960
mA
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
1,160
1,000
rnA
Auto Refresh
Current
IDD5
tRC = tRC (MIN)
1,320
1,240
mA
Self Refresh Current
IDD6
CKE 0.2V
16
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC
(MIN); tCK=tCK (MIN); Address and
control inputs change only during
Active Read or Write commands.
2,400
2,000
mA
NOTES:
Module IDD was calculated on the basis of component IDD and can be different measured according to dq hearing cap.
IDD specication is based on
SAMSUNG components. Other DRAM manufactures specication may be different.
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