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参数资料
| 型号： | W3EG6462S265JD3 |
| 英文描述： | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| 中文描述： | 512MB的- 2x32Mx64 DDR SDRAM内存缓冲 |
| 文件页数： | 8/13页 |
| 文件大小： | 250K |
| 代理商： | W3EG6462S265JD3 |
White Electronic Designs
W3EG6462S-D3
-JD3
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
May 2005
Rev. 4
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS (continued)
AC CHARACTERISTICS
PARAMETER
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each
input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per
access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command
Average periodic refresh interval
Terminating voltage delay to V
CC
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
403
335
262
263/265
MIN
1
2.2
202
SYMBOL
t
ISS
t
IPW
MIN
0.6
2.2
MAX
MIN
0.80
2.2
MAX
MIN
1
2.2
MAX
MAX
MIN
1
2.2
MAX UNITS NOTES
ns
ns
12
t
MRD
t
QH
2
12
t
HP
-
t
QHS
15
t
HP
-
t
QHS
15
t
HP
-
t
QHS
15
t
HP
-
t
QHS
ns
ns
t
HP
-
t
QHS
22, 23
t
QHS
t
RAS
t
RAP
t
RC
0.50
70,000
0.55
70,000
0.75
120,000
0.75
120,000
0.75
120,000
ns
ns
ns
ns
40
15
55
42
15
60
40
15
60
40
20
65
40
20
65
31, 48
t
RFC
t
RCD
t
RP
t
RPRE
t
RPST
t
RRD
t
WPRE
t
WPRES
t
WPST
t
WR
t
WTR
na
t
REFC
t
REFI
t
VTD
t
XSNR
t
XSRD
70
15
15
0.9
0.4
10
0.25
0
0.4
15
2
t
QH -
t
DQSQ
75
15
15
0.9
0.4
12
0.25
0
0.4
15
1
t
QH -
t
DQSQ
75
15
15
0.9
0.4
15
0.25
0
0.4
15
1
t
QH -
t
DQSQ
75
20
20
0.9
0.4
15
0.25
0
0.4
15
1
t
QH -
t
DQSQ
75
20
20
0.9
0.4
15
0.25
0
0.4
15
1
t
QH -
t
DQSQ
ns
ns
ns
t
CK
t
CK
ns
t
CK
ns
t
CK
ns
t
CK
ns
μs
μs
ns
ns
t
CK
43
1.1
0.6
1.1
0.6
1.1
0.6
1.1
0.6
37
37
18, 19
17
0.6
0.6
0.6
0.6
22
21
21
70.3
7.8
70.3
7.8
70.3
7.8
70.3
7.8
70.3
7.8
0
0
0
0
0
75
200
75
200
75
200
75
200
75
200
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3EG6462S335D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S335JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S403D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S403JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S-D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
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