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参数资料
| 型号： | W3EG72125S265D3 |
| 英文描述： | 1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| 中文描述： | 1GB的- 2x64Mx72 ECC的DDR SDRAM的注册瓦特/锁相环 |
| 文件页数： | 5/14页 |
| 文件大小： | 389K |
| 代理商： | W3EG72125S265D3 |
W3EG72125S-D3
-JD3
-AJD3
PRELIMINARY
November 2004
Rev. 2
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
I
DD
SPECIFICATIONS AND TEST CONDITIONS
0°C
≤
T
A
≤
+70°C, V
CCQ
= 2.5V ± 0.2V, V
CC
= 2.5V ± 0.2V.
Includes DDR SDRAM components only
Parameter
Operating Current
Symbol
I
DD0
Rank 1
Conditions
One device bank; Active - Precharge; t
RC
= t
(MIN); t
= t
(MIN); DQ,DM and
DQS inputs changing once per clock cycle;
Address and control inputs changing once
every two cycles.
One device bank; Active-Read-Precharge
Burst = 2; t
= t
(MIN); t
= t
(MIN);
l
= 0mA; Address and control inputs
changing once per clock cycle.
All device banks idle; Power-down mode;
t
CK
= t
CK
(MIN); CKE = (low)
CS# = High; All device banks idle;
t
= t
(MIN); CKE = High; Address
and other control inputs changing once
per clock cycle. V
IN
= V
REF
for DQ, DQS
and DM.
One device bank active; Power-Down
mode; t
CK
(MIN); CKE = (low)
CS# = High; CKE = High; One device
bank; Active-Precharge;t
= t
(MAX);
t
= t
(MIN); DQ, DM and DQS inputs
changing twice per clock cycle; Address
and other control inputs changing once per
clock cycle.
Burst = 2; Reads; Continuous burst; One
device bank active; Address and control
inputs changing once per clock cycle; t
CK
=
t
CK
(MIN); l
OUT
= 0mA.
Burst = 2; Writes; Continuous burst; One
device bank active; Address and control
inputs changing once per clock cycle;
t
= t
(MIN); DQ,DM and DQS inputs
changing once per clock cycle.
t
RC
= t
RC
(MIN)
DDR333@CL=2.5
Max
4410
DDR266:@CL=2, 2.5
Max
3960
DDR200@CL=2
Max
3960
Units
mA
Rank 2
Standby
State
I
DD3N
Operating Current
I
DD1
5220
4590
4590
mA
I
DD3N
Precharge Power-
Down Standby Current
Idle Standby Current
I
DD2P
144
144
144
rnA
I
DD2P
I
DD2F
1800
1620
1620
mA
I
DD2F
Active Power-Down
Standby Current
Active Standby Current
I
DD3P
1080
1080
1080
mA
I
DD3P
I
DD3N
2160
1800
1800
mA
I
DD3N
Operating Current
I
DD4R
5310
4950
4950
mA
I
DD3N
Operating Current
I
DD4W
5040
5220
5220
rnA
I
DD3N
Auto Refresh Current
Self Refresh Current
I
DD5
I
DD6
6750
144
6210
144
6210
144
mA
mA
I
DD3N
I
DD6
CKE
≤
0.2V
Four bank interleaving Reads (BL=4)
with auto precharge with t
=t
(MIN);
t
=t
(MIN); Address and control inputs
change only during Active Read or Write
commands.
Operating Current
I
DD7A
9540
8370
8370
mA
I
DD3N
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| W3EG72125S265JD3 | 1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3EG72125S265JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG72125S335AJD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG72125S335D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG72125S335JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL |
| W3EG72125S-AJD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL |
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