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参数资料
| 型号： | W3EG72128S202JD3M |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封装： | DIMM-184 |
| 文件页数： | 8/12页 |
| 文件大小： | 295K |
| 代理商： | W3EG72128S202JD3M |
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
W3EG72128S-D3
-JD3
May 2005
Rev. 3
ADVANCED
White Electronic Designs
IDD SPECIFICATIONS AND TEST CONDITIONS
VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V; DDR400: VCC = VCCQ = 2.6V ± 0.1V
Includes DDR SDRAM component only
Parameter
Symbol Conditions
DDR400@
CL=3
Max
DDR333@
CL=2.5
Max
DDR266@
CL=2
Max
DDR266@
CL=2.5
Max
DDR200@
CL=2
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge;
tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
2475
2070
mA
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC=tRC (MIN);
tCK=tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
2745
2340
mA
Precharge Power-
Down Standby Current
IDD2P
All device banks idle; Power-down
mode; tCK=tCK (MIN); CKE=(low)
90
rnA
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK (MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. VIN = VREF for
DQ, DQS and DM.
990
810
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-
Down mode; tCK (MIN); CKE=(low)
810
630
mA
Active Standby Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS
(MAX); tCK=tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
1080
900
mA
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; TCK= TCK (MIN); lOUT
= 0mA.
2790
2385
mA
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
2835
2475
rnA
Auto Refresh Current
IDD5
tRC = tRC (MIN)
4185
3510
mA
Self Refresh Current
IDD6
CKE 0.2V
90
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC
(MIN); tCK=tCK (MIN); Address and
control inputs change only during
Active Read or Write commands.
5130
4545
4500
mA
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相关代理商/技术参数 |
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|---|---|
| W3EG72128S262AD4-XG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| W3EG72128S262BD4-XG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| W3EG72128S262D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED |
| W3EG72128S262JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED |
| W3EG72128S265AD4-XG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
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