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参数资料
| 型号： | W3EG7232S335BD4ISG |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM MODULE, 0.7 ns, DMA200 |
| 封装： | ROHS COMPLIANT, SODIMM-200 |
| 文件页数： | 10/14页 |
| 文件大小： | 324K |
| 代理商： | W3EG7232S335BD4ISG |
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG7232S-xAD4
-xBD4
March 2007
Rev. 5
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C TA 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Parameter
Symbol Conditions
DDR333@
CL=2.5
DDR266@
CL=2, 2.5
DDR200@
CL=2
Units
Max
Operating Current
IDD0
One device bank; Active - Precharge; (MIN); DQ,DM and
DQS inputs changing once per clock cycle; Address and
control inputs changing once every two cycles. TRC=TRC(MIN);
TCK=TCK
1400
mA
Operating Current
IDD1
One device bank; Active-Read-Precharge; Burst = 2;
TRC=TRC(MIN);TCK=TCK (MIN); Iout = 0mA; Address and
control inputs changing once per clock cycle.
1805
1715
mA
Precharge Power-Down
Standby Current
IDD2P
All device banks idle; Power-down mode; TCK=TCK(MIN);
CKE=(low)
36
mA
Idle Standby Current
IDD2F
CS# = High; All device banks idle; TCK=TCK(MIN); CKE = high;
Address and other control inputs changing once per clock
cycle. VIN = VREF for DQ, DQS and DM.
725
680
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-down mode; TCK(MIN);
CKE=(low)
270
225
mA
Active Standby Current
IDD3N
CS# = High; CKE = High; One device bank; Active-Precharge;
TRC=TRAS(MAX); TCK=TCK(MIN); DQ, DM and DQS inputs
changing twice per clock cycle; Address and other control
inputs changing once per clock cycle.
815
725
mA
Operating Current
IDD4R
Burst = 2; Reads; Continous burst; One device bank
active;Address andcontrol inputs changing once per clock
cycle; TCK=TCK(MIN); IOUT = 0mA.
1850
1625
mA
Operating Current
IDD4W
Burst = 2; Writes; Continous burst; One device bank active;
Address and control inputs changing once per clock cycle;
TCK=TCK(MIN); DQ,DM and DQS inputs changing twice per
clock cycle.
1850
1625
mA
Auto Refresh Current
IDD5
TRC=TRC(MIN)
2570
2390
mA
Self Refresh Current
IDD6
CKE ≤ 0.2V
311
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4) with auto precharge with
TRC=TRC (MIN); TCK=TCK(MIN); Address and control inputs
change only during Active Read or Write commands
3965
3425
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3EG7232S335BD4-X | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM UNBUFFERED w/PLL |
| W3EG7232S-AD4 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM UNBUFFERED w/PLL |
| W3EG7232S-BD4 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM UNBUFFERED w/PLL |
| W3EG7232SXXXAD4-MG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM UNBUFFERED w/PLL |
| W3EG7232SXXXAD4-SG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM UNBUFFERED w/PLL |
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