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参数资料
| 型号： | W3EG7234S262AJD3 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM MODULE, DMA184 |
| 封装： | DIMM-184 |
| 文件页数： | 11/14页 |
| 文件大小： | 320K |
| 代理商： | W3EG7234S262AJD3 |
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG7234S-D3
-JD3
-AJD3
December 2004
Rev. 2
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C TA 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Includes DDR SDRAM components only
Parameter
Symbol
Rank 1
Conditions
DDR266@CL=2
Max
DDR266@CL=2.5
Max
DDR200@CL=2
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge; tRC
= tRC (MIN); tCK = tCK (MIN); DQ,DM and
DQS inputs changing once per clock cycle;
Address and control inputs changing once
every two cycles.
1935
1800
mA
Operating Current
IDD1
One device bank; Active-Read-Precharge
Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN);
lOUT = 0mA; Address and control inputs
changing once per clock cycle.
2115
1935
mA
Precharge Power-
Down Standby Current
IDD2P
All device banks idle; Power-down mode;
tCK = tCK (MIN); CKE = (low)
54
mA
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK = tCK (MIN); CKE = High; Address
and other control inputs changing once
per clock cycle. VIN = VREF for DQ, DQS
and DM.
810
720
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-Down
mode; tCK (MIN); CKE = (low)
450
360
mA
Active Standby Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge;tRC = tRAS (MAX);
tCK = tCK (MIN); DQ, DM and DQS inputs
changing twice per clock cycle; Address
and other control inputs changing once per
clock cycle.
900
810
mA
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst; One
device bank active; Address and control
inputs changing once per clock cycle; tCK =
tCK (MIN); lOUT = 0mA.
2160
2025
mA
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst; One
device bank active; Address and control
inputs changing once per clock cycle;
tCK = tCK (MIN); DQ,DM and DQS inputs
changing once per clock cycle.
2115
1980
mA
Auto Refresh Current
IDD5
tRC = tRC (MIN)
3150
3060
mA
Self Refresh Current
IDD6
CKE 0.2V
54
36
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC (MIN);
tCK=tCK(MIN); Address and control inputs
change only during Active Read or Write
commands.
4275
4185
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3EG7234S262D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7234S262JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7234S265AJD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7234S265D3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7234S265JD3 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL |
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