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参数资料
| 型号： | W3H128M64E-667SBC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA208 |
| 封装： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 1/31页 |
| 文件大小： | 989K |
| 代理商： | W3H128M64E-667SBC |
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W3H128M64E-XSBX
ADVANCED*
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2008
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
128M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400 Mb/s
Package:
208 Plastic Ball Grid Array (PBGA), 16 x 22mm
1.0mm pitch
Supply Voltage = 1.8V
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Eight internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 4, 5 or 6
CK/CK# Termination options available
0 ohm, 20 ohm
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Ranges
Organized as 128M x 64
Weight: W3H128M64E-XSBX - tbd
BENEFITS
45% Space savings vs. FBGA
Reduced part count
38% I/O reduction vs FBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
* This product is under development, is not qualied or characterized and is subject
to change or cancellation without notice.
Area
4 x 161mm2 = 644mm2
352mm2
45%
4 x 84 balls = 336 balls
208 Balls
38%
S
A
V
I
N
G
S
I/O
Count
W3H128M64E-XSBX
CSP Approach (mm)
84
FBGA
11.5
14.0
22
16
84
FBGA
11.5
84
FBGA
11.5
84
FBGA
11.5
FIGURE 1 – DENSITY COMPARISONS
White Electronic Designs
W3H128M64E-XSBX
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| W3H128M64E2-400SBM | DDR DRAM, PBGA208 |
| W3H128M64E-533SBI | DDR DRAM, PBGA208 |
| W3H128M64E-533SBC | DDR DRAM, PBGA208 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H128M72E-400SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H128M72E-400SBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-400SBM | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H128M72E-533NBI | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA IND TEMP. - Bulk |
| W3H128M72E-533SBC | 制造商:Microsemi Corporation 功能描述:128M X 72 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
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